Regulation of Microstructure, Static, and Microwave Magnetic Performance of NiFe/FeMn/NiFe Heterogeneous Multilayer Film
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ORIGINAL PAPER
Regulation of Microstructure, Static, and Microwave Magnetic Performance of NiFe/FeMn/NiFe Heterogeneous Multilayer Films Based on Thickness of FeMn Films Yu Liu 1 & Zhongwen Lan 1 & Zhong Yu 1 & Rongdi Guo 1 & Xiaona Jiang 1 & Chuanjian Wu 1 & Ke Sun 1 Received: 18 May 2020 / Accepted: 1 October 2020 # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Ferromagnetic (FM)/antiferromagnetic (AFM) heterogeneous multilayer films have triggered tremendous interests for application in microwave/mm devices and components. However, with the development trend of miniaturization, high frequency, and lightweight of devices, the FM/AFM heterogeneous multilayers are desired to possess high saturation magnetization (4πMs), low coercivity (Hc), and low ferromagnetic resonance (FMR) linewidth (ΔH). Herein, the Ni81Fe19 (50 nm)/Fe50Mn50 (t nm)/Ni81Fe19 (50 nm) films were fabricated by DC magnetron sputtering, and the effects of thickness of the Fe50Mn50 on the microstructure, static, and microwave properties were investigated in detail. With increasing the FeMn film thickness, the saturation magnetization firstly increased and then decreased from 7947 to 9448 Gs. The in-plane coercivity firstly decreased and then increased from 28.58 to 0.6115 Oe, and the out-of-plane exchange bias field undergoes a transition from a negative exchange bias to a positive exchange bias. Besides, the ferromagnetic resonance linewidth firstly decreased and then increased from 142 to 87 Oe. Remarkably, with a 15-nm Fe50Mn50 film, the heterogeneous multilayer films achieved optimum performance with high saturation magnetization (9448 Gs), low coercivity (1.02 Oe), and low FMR linewidth (94 Oe). The outstanding Ni81Fe19/ Fe50Mn50/Ni81Fe19 heterogeneous multilayer films exhibit great potentials in radar remote sensing, communication, and electronic countermeasure fields. Keywords Heterogeneous multilayer films . Antiferromagnetic film thickness . Microstructure . Ferromagnetic resonance . Exchange bias
1 Introduction With the rapid development of the communication industry, the operating frequency and working bandwidth microwave devices continue to increase, and the integration of microwave devices improves. As one of the core components of microwave devices, magnetic thin films must adapt to the development of high frequency and miniaturization [1–4]. Higher requirements are placed on magnetic materials, so magnetic thin films with high saturation magnetization (4πMs), low ferromagnetic resonance linewidth (ΔH), and low coercivity (Hc) have received much attention.
* Yu Liu [email protected] 1
School of Materials and Energy, University of Electronic Science and Technology of China, No.4, Section 2, North Jianshe Road, Chengdu 610054, China
[5–10]. The YIG film has an ultralow ferromagnetic resonance linewidth, but the saturation magnetization can only reach about 1800 Gs. This requires a large external DC magnetic field to meet the high frequency requirement, which will cause the device to be too bulky [
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