Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx in
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RETRACTION
Open Access
Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface Amit Prakash*, Siddheswar Maikap, Hsien-Chin Chiu, Ta-Chang Tien and Chao-Sung Lai Retraction This article is retracted. The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions. Received: 9 October 2013 Accepted: 9 October 2013 Published: 22 October 2013 Reference 1.
Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/ TaOx interface. Nanoscale Research Letters 2013, 8:288. doi:10.1186/1556-276X-8-419 Cite this article as: Prakash et al.: Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 8:419.
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* Correspondence: [email protected]
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© 2013 Prakash et al.; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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