Room Temperature Band-Edge Luminescence from Silicon Grains Prepared by the Recrystallization of Mesoporous Silicon
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KAREN L. MOORE*, LEONID TSYBESKOV**, PHILIPPE M. FAUCHET*,** AND DENNIS G. HALL* *University of Rochester, The Institute of Optics, Rochester, NY 14627 "**University of Rochester, Department of Electrical Engineering, Rochester, NY 14627
ABSTRACT
Room-temperature photoluminescence (PL) peaking at 1.1 eV has been found in electrochemically etched mesoporous silicon annealed at 950'C. Low-temperature PL spectra clearly show a fine structure related to phonon-assisted transitions in pure crystalline silicon (cSi) and the absence of defect-related (e.g. P-line) and impurity-related (e.g. oxygen, boron) transitions. The maximum PL external quantum efficiency (EQE) is found to be better than 0.1% with a weak temperature dependence in the region from 12K to 400K. The PL intensity is a linear function of excitation intensity up to 100 W/cm 2 . The PL can be suppressed by an external electric field Ž_ 105 V/cm. Room temperature electroluminescence (EL) related to the cSi band-edge is also demonstrated under an applied bias •
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