Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-
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Silicon LEDs with Room-Temperature Dislocation-related Luminescence, Fabricated by Erbium Ion Implantation and Chemical-Vapor Deposition of Polycrystalline Silicon Layers Heavily Doped with Boron and Phosphorus N. A. Sobolev^, A. M. Emel’yanov, V. V. Zabrodskiœ, N. V. Zabrodskaya, V. L. Sukhanov, and E. I. Shek Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia ^e-mail: [email protected] Submitted October 17, 2006; accepted for publication October 31, 2006
Abstract—Light-emitting diodes (LEDs) have been fabricated in which optically active centers are formed by implantation of erbium ions into silicon and subsequent high-temperature annealing in an oxidizing atmosphere and the p–n junction and the ohmic contact are formed by chemical vapor deposition of polycrystalline silicon layers doped with boron and phosphorus, respectively. The luminescent properties of the LEDs have been studied. Use of polycrystalline layers makes it possible to eliminate the losses in the bulk of the light-emitting Si:Er layer. These losses are inevitable if the conventional ion implantation and diffusion methods are employed. At 80 K, the variation of electroluminescence spectra in the spectral range of the dislocation-related luminescence with the drive current is well described if the spectrum is decomposed into three Gaussian components whose peak positions and widths are current-independent and amplitudes linearly increase with the current. At 300 K, a single peak is observed in the spectral range of the dislocation-related luminescence at ~1.6 µm. PACS numbers: 61.72.Tt, 78.60.Fi, 85.60.Jb DOI: 10.1134/S1063782607050247
1. INTRODUCTION The development of silicon optoelectronics is hindered by the lack of efficient light sources compatible with silicon technology. It seems promising to use, for fabrication of light-emitting diodes (LEDs), the socalled dislocation-related luminescence at wavelengths λ = 1.4–1.6 µm, which appears in single-crystal Si with high dislocation density. This is so because, on the one hand, waveguides, photodetectors, and modulators have already been developed for this spectral range, and on the other hand, room-temperature electroluminescence (EL) with an external quantum efficiency of ~0.1% has been observed [1]. The dislocation-related luminescence has been observed in Si upon deformation by uniaxial compression [1] or bending [2], relaxation of epitaxial SiGe layers grown on its surface [3], laser-induced recrystallization [4], liquid-phase epitaxy [5], formation of oxygen precipitates [6], and high-temperature annealing in an oxidizing atmosphere after implantation of erbium ions at doses below and above the amorphization threshold for Si [7, 8]. The advantage of the latter technique over the most widely used method of uniaxial deformation of Si consists in its compatibility with commercial microelectronic technology and the fact that it provides a highly uniform distribution of dislocations over the area of large-diam-
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