Scaling of Hafnium-Based High-k Dielectrics
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Scaling of Hafnium-Based High-k Dielectrics Dina H. Triyoso1, Rama I. Hegde1, Rich Gregory2, David C. Gilmer1, James K. Schaeffer1, Srikanth B. Samavedam1, Vidya Kaushik1, and Nevine Rochat3 1 Technology Solutions Organization (TSO), Freescale Semiconductor Inc, 3501 Ed Bluestein Blvd, Austin, TX, 78721 2 Wireless and Packaging Systems Laboratory (WPSL), Freescale Semiconductor Inc, 2100 E. Elliot Rd., Tempe, AZ, 85284 3 CEA-LETI, MINATEC, 17 rue des Martyrs, Grenoble, 38054, France
ABSTRACT In this paper, various approaches to extend scalability of Hafnium-based dielectrics are reported. Among the three crystal phases of HfO2 (monoclinic, cubic and tetragonal), the tetragonal phase has been reported to have the highest dielectric constant. Tetragonal phase stabilization by crystallizing the thin HfO2 using a metal capping layer and by adding zirconium is demonstrated. The microstructure, morphology, optical properties and impurities of HfxZr1xO2 dielectrics (for 0
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