Search for Ion Induced Mixing in Ceramic-Ceramic Systems
- PDF / 972,215 Bytes
- 6 Pages / 414.72 x 648 pts Page_size
- 73 Downloads / 149 Views
101 Mat. Res. Soc. Symp. Proc. Vol. 396 ©1996 Materials Research Society
was used for ZrC, ZrO2 and Si3N4 films. While the structure of the films were determincd by X-ray diffraction (XRD), the thickness and composition were measured by Rutherford backscattering spectrometry (RBS). RBS, Auger Electron Spectroscopy (AES) and ion channeling ( for single crystal substrates) were used to analyze the interface before and after ion bombardment. For the TiN/SiC and ZrO2 / SiC systems 500 KeV Si+ ions from a tandem accelerator were used. For other systems either Xe+ or Kr+ ions were used with ion energies sufficient to penetrate the interface and reach the substrate. RESULTS AND DISCUSSION Thin film XRD of the as deposited films indicted that the TIN films deposited by ion plating were cubic and were epitaxial on MgO (100) substrates. ZrO2 films prepared by RF sputtering were tetragonal. Most of the ZrC films were generally polycrystalline ( at substrate temperature of 500C ) with lattice parameter varying between 4.715 and 4.725 depending on the substrate temperature. No epitaxy of the ZrC films could be detected by ion channeling when deposited on Single crystal substrates such as Si or MgO. SiC films prepared by RF sputter deposition on Si (100) were amorphous and did not show any structure when deposited at 300 C or with postdeposition annealing in vacuum at 1200 C for 1 hour. (a) TiN/MgO system Attempts to induce mixing in TiN/MgO system were carried out by using 2 MeV Si+, 500 KeV Kr+ and Au+ ions of energy 500 keV and 2 MeV. Thin (120nm) epitaxial TiN films deposited on MgO (100) substrates were used as samples in all implantations. The implantations were carried out at 77K unless otherwise indicated. The ion channeling spectra of as deposited and 2MeV Si+ implanted samples (Fig. l) did not show any mixing even though the ion energy was sufficient to allow the ions to penetrate well beyond the film substrate interface and reach the
S
1. Random 2. Aligned 3. Aligned after Si imp.
Random
Ti
N
Ti
N
MsOOl
lawN
Mg SON0
iqged".
"
-
Au .
a
50
ioo
.o $E
ib
"
2N
25 0
Figure 1. Aligned and random spectra of Figure 2. TiN/MgObefore and after 500 Kev after 10 16 / cm 2 Si+ implantation
50
100
iSO
200
250
Aligned and random spectra for epitaxial TiN film on MgO 7x 101 6 /cm 2 _500keV Au+implant.
substrate. Similar negative results were observed with 500 KeV Kr+(not shown) where calculated projected range 161 of the ions just exceeded the TiN film thickness and in the case of 500 KeV Au+ions where the energy was insufficient for the ions to reach the interface. While some damage was observable from channeling Xmin measurements both in the TiN film and
102
the MoO substrate, the implanted Au ions appear to go into substitutional sites of Ti in the TiN lattice (Fig.2). The RBS spectra of Fio.3 for 2 MeV Au+ implantations however, clearly indicate mixing at the interface as seen from the movement of the Mg edge towards the surface and reduction in the area of the Ti peak. 20000
(b) TiN/SiC system
Data Loading...
