Selective-area growth of III-V nanowires and their applications
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Selective-area growth of III-V nanowires and their applications Katsuhiro Tomiokaa) Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan; and Japan Science and Technology Agency— Precursory Research for Embryonic Science and Technology, Kawaguchi-shi, Saitama 332-0012, Japan
Keitaro Ikejiri, Tomotaka Tanaka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, and Takashi Fukuib) Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan (Received 28 January 2011; accepted 21 March 2011)
We review the position-controlled growth of III-V nanowires (NWs) by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). This epitaxial technique enables the positioning of the vertical NWs on (111) oriented surfaces with lithographic techniques. Core-shell structures have also been achieved by controlling the growth mode during SA-MOVPE. The core-shell III-V NW-based devices such as light-emitting diodes, photovoltaic cells, and vertical surrounding-gate transistors are discussed in this article. Nanometer-scale growth also enabled the integration of III-V NWs on Si regardless of lattice mismatches. These demonstrated achievements should have broad applications in laser diodes, photodiodes, and high-electron mobility transistors with functionality on Si not made possible with conventional Si-CMOS techniques.
I. INTRODUCTION
Semiconductor nanowires (NWs) have attracted a great deal of attention for use in future nanometer-scale electronic and optical devices1–6 because they have small diameters and large surface areas that enable high-density integration of active devices on various platforms and the fabrication of various kinds of functional devices through the use of heterostructures. The surface area to grow radial heterostructures enables the formation of core-shell or core-multishell (CMS) NWs. Moreover, top surfaces with small diameters enable the formation of axial heterostructures regardless of lattice mismatches. The use of core-shell or axial NWs gives some functionality to NW-based applications. The main approach to grow NW is based on vapor–liquid– solid (VLS) mechanism,7 which uses catalysts and the liquid phase underneath metal particles for crystallization. In 1964, Wagner and Ellis reported the mechanism responsible for forming Si whiskers.7 VLS-grown III-V compound semiconductor nanowhiskers were investigated in the early 1990s.8 The potential of NWs to be applied to future electronics and photonics was demonstrated in the early 2000s after this pioneering work.2–6,9 Since then, VLS has become exceedingly common because this method can be used to synthesize almost all semiconductor NWs through rather simple procedures. The metal catalysts, however, Address all correspondence to these authors. e-mail: [email protected] b) e-mail: [email protected] DOI: 10.1557/jmr.2011.103
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J. Mater. Res.,
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