Selective Growth of Semiconducting Silicide Phase Based on the Growth Parameters
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ORIGINAL PAPER
Selective Growth of Semiconducting Silicide Phase Based on the Growth Parameters A. N. Fouda 1
&
E. A. Eid 2
Received: 23 October 2018 / Accepted: 25 November 2019 # Springer Nature B.V. 2019
Abstract Os silicide thin films were grown on (001) Si substrate using MBE method. The structural characterizations of the grown films were investigated using x-ray diffraction (XRD) measurements, Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). In addition, the surface morphology was depicted by AFM micrographs, and the nature of the grown epilayers was recognized using Transmission electronic microscope (TEM). All the samples had rough surface with various size of hillocks and intermediate valley like regions with a remarkable decrease in surface roughness after annealing. The measurements revealed a significant difference in the formed phases and crystalline quality with the growth parameters. The influence of Si buffer layer with thickness of 20 nm which deposited at relatively low temperature of 650 °C, and high temperature annealing (at 1050 °C) of the grown Os silicide epilayer was investigated. It was confirmed that isolating a metastable phase OsSi2 was established by selecting the required growth parameters. Keywords MBE . Phase selection . Growth parameters . Os-Si system . Raman spectra . AFM
1 Introduction Recently, semiconducting silicides Ir3Si5, MnSi1.7, FeSi2, CrSi2, Ru2Si3 and OsSi2 have attracted much attention because of its wide range of applications like thermoelectric applications, gates, Schottky diode in bipolar transistors, image sensors [1–6]. In addition, the phenomenal success of silicon integrated circuits is based on low resistivity, surface smoothness, easy to etch and stability even in oxidizing ambient [7–9]. Thermodynamically, depending on the eutectic composition, eutectic temperature and pressure, there are three intermetallic phases of Os-Si system. These phases are OsSi2, Os2Si3 and OsSi [10]. Moreover, silicon has indirect band gap, and hence high absorption semiconducting silicides with direct band gap such as OsSi2, FeSi2 and Ru2Si3 are desirable for optoelectronic applications [11–13]. Os-silicide is one of * A. N. Fouda [email protected] 1
Physics Department, Faculty of Science and Arts, King Abdul Aziz University, Rabigh 344, Saudi Arabia
2
Department of Basic Science, Higher Technological Institute, 10th of Ramadan City 44629, Egypt
the most promising direct band gap optical active transition metal silicides. Due to its oxidation resistance and stability, it has a wide range of applications like microelectronics, integrated circuits and optoelectronic applications of Si-based light emitters [14–16]. Silicide thin films can be prepared by chemical vapor deposition, sputtering, ion beam deposition, pulsed laser deposition and molecular beam epitaxy (MBE) [17–24]. Among these, MBE films provide layer by layer growth of epitaxial well oriented, precise controlled and superior quality films. Considering the importance of Os-silicides and the lack
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