Self-assembly for electronics
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Introduction
Block copolymers and their assembly
Electronics are pervasive as sensing, communication, and computation devices, with continued growth in demand for “conventional” consumer electronic goods (e.g., cameras, computers, and tablets) and “unconventional” applications to support the Internet of Things, mobile, wearable, and implantable technologies. Conventional and unconventional electronics often require patterning to scale down device size and enhance performance; on the other hand, processing over large areas and the introduction and integration of a broader range of materials are also required to realize both function and form. Fabrication techniques are typically “top-down” processes in the electronics industry. However, the demands for small-scale, large-area, more functional, and flexible forms for devices are motivating research and commercial adoption of “bottom-up” synthesis and assembly methods for materials and devices. Here, we describe through examples, the self- and directed self-assembly of molecules, polymers, and nanoparticles (NPs) being exploited for their structure and function to advance electronic devices.
Self-assembly of block copolymers (BCPs) has been extensively researched for lithographic applications due to its ability to form uniform features at the nanometer scale. BCPs consist of chemically distinct, covalently bonded homopolymers. Provided sufficient thermal energy, free-energy minimization drives BCPs to self-assemble into a myriad of morphologies depending on the relative volume fractions of the constituent homopolymers.1 Of particular interest to chipmakers are lamellar and cylindrical phase diblock copolymers that can be used to pattern lines and holes, respectively. The size and pitch of the self-assembled lamellae and cylinders can be set by varying the polymer length, allowing BCP lithography to reach sub-10 nm resolutions.2 Integration with lithography additionally provides guiding features for directed selfassembly (DSA) to achieve domain registration and placement control.
For semiconductor technology Directed self-assembly was initially envisioned as a method to extend the resolution of 193-nm immersion (193i) lithography.
*This manuscript has been authored by an author at Lawrence Berkeley National Laboratory under Contract No. DE-AC02-05CH11231 with the US Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, that the United States Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US Government purposes. Cherie R Kagan, University of Pennsylvania, USA; [email protected] Taeghwan Hyeon, Center for Nanoparticle Research of the Institute for Basic Science, and School of Chemical and Biological Engineering, Seoul National University, South Korea; [email protected] Dae-Hyeong Kim, Center for Nanoparticle Research of the Institute for Basic Science, and School o
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