Shallow P + -N Junction Fabrication by Plasma Immersion Ion Implantation
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SHALLOW P+-N JUNCTION FABRICATION BY PLASMA IMMERSION ION IMPLANTATION C. A. Pico, X.Y. Qian, E. Jones, M.A. Lieberman, and N.W. Cheung University of California at Berkeley, Department of Electrical Engineering and Computer Sciences, Berkeley, CA 94720
ABSTRACT Plasma immersion ion implantation (PIII) has been applied to fabricate BF 3 ions created by an shallow p-n junction diodes and MOS test structures. electron cyclotron resonance source were implanted into n-type Si(100) at an accelerating voltage of -2 kv. The implant doses ranged from 4X1014/cm2 to 5 2 4X10- /cm . In some cases, the top layers of the Si(100) substrates were 6 2 preamorphized by a 3X1015/cm2 to 101 /cm implant of SiF4 by PIII at -7.2 kV The ideality factor exhibited in both non- and prior to the BF 3 implant. Reverse leakages preamorphized samples during forward bias is 1.02 to 1.05. 2 High frequency capacitance and high field were measured at 30 nA/cm at -5V. breakdown measurements of the oxide test structures showed no significant damage to the oxide.
INTRODUCTION Shallow (
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