Silicon Carbide Electronic Materials and Devices
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as the More Electric Aircraft (MEA) initiative. This initiative is part of a larger initiative referred to as the More Electric Initiative, which includes military and commercial systems such as electric vehicles, ships, and commercial power. Within the MEA initiative, the objectives are to achieve a significant improvement in aircraft flight-control system reliability, mass reduction, and reduced dependency on environmental control subsystems. One approach to achieve these objectives is through the use of SiC-based devices which can withstand higher temperatures and operate under higher frequency and power conditions than can Si- or GaAs-based devices. The potential payoffs of this approach are too
Internal Engine Electric Starter/Generator Electric-Driven, Environmental and Engine Controls Electric Aircraft Utility Functions
Fault-Tolerant Solid-State Electrical Distribution System
extensive to explain here, but examples of subsystems that may be affected by the MEA initiative are presented in Figure 1. While MEA represents a fundamental rethinking of how fighter aircraft are designed, the insertion of SiC electronics into these subsystems is still years away. Other military and commercial applications include high-frequency SiC-based devices that can deliver continuous high power at X-band (8-10 GHz) developed for temperatures up to 500°C. These devices and circuits may be used for radar and communications systems for unpiloted aerial vehicles and distributed satellite arrays. Commercially the petroleum industry provides a major driving force for the development of hightemperature electronics. Sensors are needed to probe the environment around drilling equipment where temperatures can reach nearly 300°C. The automotive industry is interested in SiC electronics for a variety of applications, such as engine control sensors, but the economics of equipping a fleet of vehicles with relatively expensive sensors remains a formidable barrier to cross before SiC electronics enter this lucrative market. Silicon carbide technology has advanced to where practical devices are nearly available. Therefore basic materials needed for further progress are in place, and future research opportunities are vast. This issue of MRS Bulletin provides a balanced view of the scientific and technical status of SiC electronics technology, primarily from a materials perspective. W.J. Choyke and G. Pensl describe the physical properties of SiC, including its unique ability to exist in many forms or
Solid-State Power Controllers Integrated Power Unit Solid-State Remote Terminals
Electric-Driven Flight Actuators
Electric Anti-Icing Electric-Actuated Brakes Figure 1. Schematic diagram of a fighter aircraft, which illustrates electronic subsystems potentially improved by the insertion of SiC electronic materials.
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Silicon Carbide Electronic Materials and Devices
polytypes. The authors then describe electrical and optical data, providing insight into the nature of p- and n-type dopants in SiC, with special emphasis on technically impor
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