Silicon Nitride Back Barrier in AlGaN/GaN HEMT to Enhance Breakdown Voltage for Satellite Applications
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ORIGINAL PAPER
Silicon Nitride Back Barrier in AlGaN/GaN HEMT to Enhance Breakdown Voltage for Satellite Applications V. Janakiraman 1 & S. Baskaran 2 & D. Kumutha 3 Received: 29 July 2020 / Accepted: 28 October 2020 # Springer Nature B.V. 2020
Abstract Silicon Nitride (SiN) Back Barrier is proposed and investigated for GaN based High Electron Mobility Transistor (HEMT) to improve the breakdown voltage. The investigation is carried out using Technology Computer Aided Design (TCAD) simulator. The proposed device is yield higher breakdown voltage than the conventional device by 32 V. It is attributed to the reduction of punch-through current by SiN Back Barrier. The proposed device also recorded a peak transconductance of 325 mS/mm. Further, the vertical leakage current of the proposed device is lower than the conventional device. As proposed device demonstrate the higher breakdown voltage, it is a promising candidate for satellite high power electronic application. Keywords GaN . HEMT . Breakdown . SiN . Back barrier . Power electronics
1 Introduction For next generation power devices, Gallium Nitride based HEMT is a promising device [1–4]. The higher carrier mobility in 2-D channel also reduces the power loss and thereby enables GaN device is suitable for power electronic application. Further, higher breakdown field of GaN material enables GaN device to withstand large off-state voltage. The wide band gap and higher thermal conductivity properties of GaN also make GaN-HEMT to operate on elevated temperature. Apart from these properties, large electron velocity enables GaN based devices for high frequency operation. On the other hand, Silicon based is more suitable for low power application. The low power applications are computer, cellularphone, charger, etc. Further, GaAs based device is more suitable high frequency and/or Terahertz frequency. However, both Si and GaAs based devices is not capable to support high power due to lower energy band-gap. Hence, GaN has higher
* S. Baskaran [email protected] 1
Department of ECE, Dhanalakshmi Srinivasan College and Technology, Chennai, India
2
Department of ECE, SKP Engineering College, Thiruvannamalai, India
3
Department of ECE, Kingston Engineering College, Vellore, India
energy band-gap and becomes competitive material for Si and GaAs material. Apart from the material properties, lot of technological advancement in GaN-HEMT has been done, which are detailed as follows. Field plate (FP) is employed in GaN device to enhance breakdown voltage [5]. However, this FP technique induce additional parasitic capacitance which is not desirable. Gate insulation is used to reduce the gate leakage. But gate insulation shifts the threshold voltage towards more negative voltage. The large negative voltage requires high voltage power supply to keep the transistor in Off-state which is not a cost-effective design. Back Barrier is used GaNHEMT to enhance the electron confinement and breakdown voltage [6–9]. GaN cap layer is used to diminish the current collapse [10]. Although
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