Sputter Epitaxy of (ZnO) x (InN) 1-x films on Lattice-mismatched Sapphire Substrate
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MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.17
Sputter Epitaxy of (ZnO)x(InN)1-x films on Latticemismatched Sapphire Substrate Nanoka Miyahara1, Seichi Urakawa1, Daisuke Yamashita1, Kunihiro Kamataki1, Kazunori Koga1, Masaharu Shiratani1 and Naho Itagaki1 1
Kyushu University, Motooka 744, Fukuoka 819-0395, Japan
ABSTRACT
We have recently developed a novel semiconductor, (ZnO)x(InN)1-x (abbreviated to ZION). In this study, we have succeeded in direct epitaxial growth of ZION films on 19–21%-latticemismatched c-plane sapphire by radio-frequency (RF) magnetron sputtering. X-ray diffraction analysis showed that there is no epitaxial relationship between ZION films fabricated at room-temperature (RT) and the sapphire substrates, while the films fabricated at 450oC grow epitaxially on the sapphire substrates. From the analysis of time evolution of the surface morphology, the process for the epitaxial growth of ZION on sapphire is found to consist of three stages. They are (i) initial nucleation of ZION crystallites with crystal axis aligned to the sapphire substrate, (ii) island growth from the initially formed nuclei and subsequent nucleation (secondary nucleation) of ZION crystallites, and (iii) lateral growth of ZION islands originated from initially formed nuclei. On the other hand, non-epitaxial ZION films fabricated at RT just grow in 3D mode. From these results, we conclude that the substrate temperature is the key to control of nucleation and subsequent epitaxial growth of ZION films on the lattice-mismatched substrate.
INTRODUCTION An exciton, which is an electrically neutral quasiparticle, is a bound state of an electron-hole pair attracted by the electrostatic Coulomb force. The most interesting feature of an exciton is that it can be generated by and converted back into a photon within a short time (
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