Status of Ion Projection Lithography
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Status of Ion Projection Lithography Wilhelm H. Bruenger, Rainer Kaesmaier1, Hans Loeschner2, and Reinhard Springer3 Fraunhofer Institute for Silicon Technology (ISIT) Fraunhoferstr. 1, D-25524 Itzehoe, Germany, e-mail: [email protected] 1 Infineon Technologies AG, D-81541 Munich, Germany 2 IMS - Ionen Mikrofabrikations Systeme GmbH, A – 1020 Vienna, Austria 3 IMS-Chips, Allmandring 30 a, D-70569 Stuttgart, Germany ABSTRACT As part of the European MEDEA project on Ion Projection Lithography (IPL), headed by Infineon Techologies, a process development tool (PDT) has been assembled at IMS, Vienna, with the final target of 50 nm resolution in a 12.5 mm exposure field at 4x demagnification. The ion-optical system (PDT-IOS) has been integrated, including the LEICA mask changer and a sophisticated metrology stage with in-situ diagnostics. In parallel, the LEICA wafer stage and the vacuum compatible off-axis ASML wafer alignment system have been realized. At the moment (Nov00) the He+ ion beam is aligned until the mask level. Ion beam proximity wafer exposures directly behind the mask show a performance of the illumination optics as predicted. 150 mm stencil masks with 125mm diameter, 3µm Si membranes, 50mm x 50mm design field, have been produced by IMS-Chips, Stuttgart. There is expectation to start the PDT-IOS test phase in Q1/01. Using the experimental ion projector at the Fraunhofer-Institute ISiT in Berlin recent resolution tests have demonstrated 50 nm lines and spaces without proximity effect in standard Shipley DUV resist UVIIHS at an exposure dose of 0.5 µC/cm² for 75 keV He+ions. This was accomplished by 8.5 x demagnification of a new generation of stencil test masks from IMSChips. One further promising application of IPL is the resistless structuring of thin magnetic films to produce magnetic nano dots for future ≥ 100 G bit/in2 storage devices. A consortium of IBM Germany - Speichersysteme Mainz, Fraunhofer-ISiT, LEICA Jena and IMS-Chips in cooperation with IMS-Vienna has been formed to evaluate this technology.
INTRODUCTION In 1997 the semiconductor industry started the Next Generation Lithography (NGL) development programs to secure the ongoing procedure of continuous downscaling of integrated circuits. In Europe, as part of the MEDEA program, a consortium headed by Infineon Technologies concentrates on the further development of Ion Projection Lithography (IPL) as the most promising candidate for NGL. An excellent review of IPL is given by J. Melngailis et al. [1]. In the first paragraph of the present paper the main arguments are collected which strongly support the use of ions as imaging particles in a future lithography tool. In the following the status of the assembly of the IPL process development tool (PDT) at IMS, Vienna, is reported (see also [2]). In parallel with the set up of the tool, resist process development and resolution tests have been conducted at the Fraunhofer-Institute ISiT in Berlin with a research type ion projector. Patterned ion beams have also the potential of surface modificat
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