Structure and Properties of Polysilsesquioxanes and Copolymers for Ultra-Low Dielectric Films
- PDF / 234,584 Bytes
- 11 Pages / 612 x 792 pts (letter) Page_size
- 86 Downloads / 162 Views
E6.5.1
Structure and Properties of Polysilsesquioxanes and Copolymers for Ultra-Low Dielectric Films Do Y. Yoon, Hyun Wook Ro, Eun Su Park, Jin-Kyu Lee, Hie-Joon Kim , Kookheon Char 1, HeeWoo Rhee 2, Dongil Kwon 3, and David W. Gidley 4 School of Chemistry, Seoul National University, Seoul 151-742, KOREA. 1 School of Chemical Engineering, Seoul National University, Seoul 151-742, KOREA. 2 Department of Chemical Engineering, Sogang University, Seoul 121-742, KOREA. 3 School of Materials Science and Engineering, Seoul National University, Seoul 151-742, KOREA. 4 Department of Physics, University of Michigan, Ann Arbor, MI 48109. . ABSTRACT Polysilsesquioxanes (PSSQs) with the empirical formula (RSiO3/2)n have become very important as low-dielectric insulators for copper interconnects in the next-generation logic devices, but the detailed structure-property relationships were completely lacking. We have investigated the microstructure and functional properties of PSSQs with varying alkyl substituents and also PSSQ copolymers. As a result, significant advances have been made in the scientific understanding of PSSQ structures and significant improvements of key properties such as the crack resistance, mechanical modulus and hardness, and incorporation of nanometer-sized (
Data Loading...
