Ultralow Dielectric Constant and High Temperature Resistance Composites Based on Self-Crosslinking Polysulfone and Hollo
- PDF / 1,555,292 Bytes
- 8 Pages / 593.972 x 792 pts Page_size
- 73 Downloads / 167 Views
https://doi.org/10.1007/s11664-020-08491-2 2020 The Minerals, Metals & Materials Society
Ultralow Dielectric Constant and High Temperature Resistance Composites Based on Self-Crosslinking Polysulfone and Hollow Glass Beads JIACHUN ZHONG,1 XIAOYI ZHENG,1 GANG HE,1 JIALING XIA,1 and ZEJUN PU1,2 1.—College of Materials Science and Engineering, Material Corrosion and Protection Key Laboratory of Sichuan province, Key Laboratories of Fine Chemicals and Surfactants in Sichuan Provincial Universities, Sichuan University of Science and Engineering, Zigong 643000, China. 2.—e-mail: [email protected]
In this work, ultralow dielectric constant (ultralow-k) polysulfone (PSF) composites were prepared by adding hollow glass beads (HGB) modified with 1,3-divinyltetramethyldisiloxane (DVTM). The results indicated that the surface modification of HGB (m-HGB) effectively enhanced the interfacial compatibility between the inorganic fillers and PSF matrix. DSC and TGA measurements of the composite films were performed under a nitrogen atmosphere, and the results showed that the composite films possess high glass transition temperatures varying from 187 C to 190 C, and are thermally stable up to 445 C. The mechanical properties of composite films with modified HGB fillers show a certain drop, but the values were still higher than 32 MPa. Furthermore, the obtained composite films show low dielectric constant, low dielectric loss, good permittivity-frequency stability and dielectrictemperature stability under 190 C. Therefore, we shown an effective path to prepare composites with ultralow dielectric constant for use in high temperature resistant ultra large scale integration (ULSI) flexible insulation substrate field. Key words: Polysulfone, hollow glass beads, composites, ultralow dielectric constant, high temperature resistance
INTRODUCTION With the rapid and highly integrated development of ultra large scale integration (ULSI) circuits in the semiconductor industry, chips with high speed, high device density and low power dissipation have gradually become the key components of ULSI manufacturing.1 In particular, 5G and 6G communication as well as more high-frequency communication will be the future trend of development of wireless communication technology, corresponding to the growing demand for low dielectric constant (low-k) materials with low dissipation
(Received June 11, 2020; accepted September 15, 2020)
factors (tan d).2–4 Therefore, in order to implement high-performance and lightweight miniaturization of chips, the density of interconnected wires in the chips will continue to increase, and the parasitic effect of resistance (R) and capacitance (C) in the interconnection will become increasingly obvious, which can lead to serious signal propagation delay, high energy dissipation and line-to-line crosstalk noise.5 Thus, to improve the above-mentioned situation in integrated circuits, two strategies have been developed. One is reducing the electrical resistance (R) of the wires, and the other is decreasing the para
Data Loading...
