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STUDY OF ENHANCED SOLID PHASE EPITAXY OF AMORPHOUS SILICON WITH LOW CONCENTRATIONS OF IMPLANTED PHOSPHOROUS YOUNG-JIN JEON 1, WON WOO PARK 2 , M. F. BECKER 1 ,2 , and RODGER. M. WALSER1,2,3 1Center for Materials Science and Engineering, The University of Texas, Austin, TX 78712, U.S.A., 2 Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, U.S.A., 3 J. H. Herring Centennial Professor in Engineering ABSTRACT In this work we measured the functional dependence of the solid phase epitaxial (SPE) regrowth of amorphous silicon on the implanted phosphorous concentration, Np. The growth rates of self-ion amorphized layers in silicon wafers with (100) substrate orientation were measured by in situ, high precision, isothermal cw laser interferometry for temperatures from 460"C to 590"C, and concentrations in the range 2x10 17 cm-3

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