Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature
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SOLID PHASE EPITAXY OF IMPLANTED SILICON BY ELECTRON IRRADIATION AT ROOM TEMPERATURE G.LULLI*, P.G.MERLI and M.VITTORI ANTISARI * CNR - Istituto LAMEL, Via dt Castagnoli n.1 - 40126 Bologna, Italy ** ENEA - Divisone Scienza dei Materiali, CRE Casaccia, CP 2400 00100 Roma, Italy ABSTRACT Solid-phase epitaxy of implanted Si is observed at room temperature during in situ electron irradiation in a Transmission Electron Microscope. Results obtained from irradiation of cross sections of samples containing different doping species show that: i) the basic mechanism of the process is the migration and recombination at the amorphous-crystalline interface of radiation defects coming both from the amorphous and crystalline side; ii) the diffusion length of such defects is of the order of 40 nm; iii) the regrowth rate is impurity dependent: a factor two exists between the fastest rate (P-doped layers) and the slowest one (intrinsic and B doped layers). INTRODUCTION The matter of radiation induced processes in semiconductors has received increasing attention during the last few years, due to the problems raised by the impact of beam-controlled processing technologies in Very Large Scale Integration (VLSI) electronics. Some of these problems are related to the possibility of introducing new technological processes, which make use of irradiation to induce lowtemperature phase transformations in semiconductor materials. An example is Solid Phase Epitaxy (SPE) of amorphous layers induced by ion or electron beam irradiation at temperatures (T
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