Study of the growth mechanism and properties of InN films grown by MOCVD

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Study of the growth mechanism and properties of InN films grown by MOCVD Abhishek Jain and Joan M. Redwing Department of Materials Science and Engineering, Materials Research Institute The Pennsylvania State University, University Park, PA 16802

ABSTRACT Thin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (

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