Study on the lateral growth of the diamond in the substrate holder and the effect of temperature gradient on the large-a
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Study on the lateral growth of the diamond in the substrate holder and the effect of temperature gradient on the large-area diamond surface morphology Bo Yang1 , Rongjun Zhang2, Qiao Shen2, Libin Zhang1, Zhiyin Gan1,2,*, and Sheng Liu1,3,4,* 1
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China TrueOne Semiconductor Technology Company Ltd., Guangdong 528251, China 3 The Key Laboratory of Transients in Hydrolic Machinery of Ministry of Education, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China 4 Research Center of Electronic Manufacturing and Packaging Integration, Institute of Technological Sciences, Wuhan University, Wuhan 430072, China 2
Received: 8 May 2020
ABSTRACT
Accepted: 1 September 2020
The study of the distance between the substrate edge and the substrate holder cavity edge on the growth quality was further carried out. The results showed that the substrate edge quality decreased with the increase in the distance from the substrate edge to the substrate holder cavity edge, and the lateral growth rate significantly increased. Therefore, a three-step growth method was proposed. After 68 h of growth, the substrate size grew from 3.57 mm 9 3.63 mm 9 1.01 mm to 6.13 mm 9 6.04 mm 9 2.52 mm, but at the end of the third step, the quality and the morphology of the substrate became poor. Two experiments were carried out to verify the influence of eccentric placement and the substrate holder cavity edge on the substrate morphology. The results showed that the influence of the substrate holder cavity edge on the substrate edge quality was more significant than that of eccentric placement. Because of the lateral growth, the substrate edge will inevitably be closer to the cavity edge during the growth, and its temperature gradient will increase. Therefore, an improved substrate holder was designed, and the simulation results showed that the new substrate holder could effectively guarantee the uniformity of the temperature gradient on the large-scale substrate surface.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
Handling Editor: Kevin Jones.
Address correspondence to E-mail: [email protected]; [email protected]
https://doi.org/10.1007/s10853-020-05256-4
J Mater Sci
Introduction Single-crystal diamond has the advantages of wide bandgap, high mobility, and high thermal conductivity, which are the major characteristics of nextgeneration semiconductor materials, especially in high frequency and high power conditions [1–4]. At present, microwave plasma chemical vapor deposition (MPCVD) is an effective method for growing semiconductor-grade single-crystal diamond [5–7], which could produce a diamond with fewer impurities, relatively large area and high quality. In the semiconductor industry, the 450-mm diameter wafer size of Si has been achieved [8], while the fabrication of large-area and high-quality singlecrystal diamond (SCD) at a high growth rate still needs to be solved [9–11]. Y.
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