Surface Processes in Laser-Induced Etching of Silicon Studied by X-Ray Photoelectron Spectroscopy

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SURFACE PROCESSES IN LASER-INDUCED ETCHING OF SILICON STUDIED BY X-RAY PHOTOELECTRON SPECTROSCOPY

MASATAKA HIROSE AND TSUYOSHI OGURA Research Center for Integrated

Systems,

Hiroshima

University

Higashihiroshima 724, Japan

ABSTRACT A silicon surface exposed to NF3 gas was irradiated with an

ArF

excimer laser beam. The reaction products on the surface and their chemical bonding features

were studied by

in-situ x-ray photoelectron spectroscopy

at each step of the photochemical etching. It was found that SiFX (i

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