Surface Processes in Laser-Induced Etching of Silicon Studied by X-Ray Photoelectron Spectroscopy

  • PDF / 444,337 Bytes
  • 11 Pages / 420.48 x 639 pts Page_size
  • 12 Downloads / 287 Views

DOWNLOAD

REPORT

SURFACE PROCESSES IN LASER-INDUCED ETCHING OF SILICON STUDIED BY X-RAY PHOTOELECTRON SPECTROSCOPY

MASATAKA HIROSE AND TSUYOSHI OGURA Research Center for Integrated

Systems,

Hiroshima

University

Higashihiroshima 724, Japan

ABSTRACT A silicon surface exposed to NF3 gas was irradiated with an

ArF

excimer laser beam. The reaction products on the surface and their chemical bonding features

were studied by

in-situ x-ray photoelectron spectroscopy

at each step of the photochemical etching. It was found that SiFX (i

Data Loading...

Recommend Documents
Surface Oxidation Processes in Compound Semiconductors Studied by Profile Imaging

157 78 3MB

Hybrid interfaces of conjugate polymers: Band edge alignment studied by ultraviolet photoelectron spectroscopy

184 103 1MB

Ion bombardment-induced changes in oxide-metal interactions studied by photoelectron spectroscopy

171 52 548KB

Spin-Polarized Photoelectron Spectroscopy

175 92 2MB

Structural Alterations in Titanate Pyrochlores Induced by Ion Irradiation: Xray Photoelectron Spectrum Interpretation

191 114 63KB

X-ray photoelectron spectroscopy studies of silicon suboxides obtained by the sol-gel method

125 25 168KB

Inverse Photoelectron Spectroscopy

215 8 2MB

Size Distribution Of Embedded Nano-Crystallites In Polymorphous Silicon Studied By Raman Spectroscopy And Photoluminesce

149 69 273KB

Crystallization as Studied by Broadband Dielectric Spectroscopy

204 70 15MB

Very High Resolution Photoelectron Spectroscopy

215 100 21MB

Comparison of the Band Gap of Porous Silicon as Measured by Photoelectron Spectroscopy and Photoluminescence

188 41 388KB

Photoelectron spectroscopy study of amorphous silicon-carbon alloys deposited by plasma-enhanced chemical vapor depositi

160 96 188KB