X-ray photoelectron spectroscopy studies of silicon suboxides obtained by the sol-gel method
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X-ray photoelectron spectroscopy studies of silicon suboxides obtained by the sol-gel method S. Santucci,a) E. Cordeschi, L. Lozzi, M. Passacantando, and P. Picozzi Dipartimento di Fisica Universit`a dell’Aquila, INFM Unit´a dell’Aquila, 67010, Coppito (AQ), Italy
L. Mancinelli degli Esposti ISRIM, 05100, Terni, Italy (Received 20 February 1995; accepted 20 March 1996)
Silicon suboxides thin films obtained by sol-gel and dip-coating methods, starting from a sol containing different percentages of TEOS (tetraethoxysilane) and MTEOS (methyltriethoxysilane), were grown onto silicon substrates. The samples were annealed at 100, 300, and 500 ±C, and the electronic and compositional properties of the surface were studied by x-ray photoelectron spectroscopy (XPS) detecting the Si “Auger parameter” and the valence band. The effects produced by an ion-sputtering treatment of the samples were also studied.
I. INTRODUCTION
Over the last two decades, sol-gel thin film coatings have been widely developed for many industrial applications including optical, microelectronics, optoelectronic, and protective purposes.1 One of the most interesting features of the sol-gel procedure is based on a low temperature chemically controlled polymerization reaction which leads to well-defined stoichiometries and allows large structural variations in the polymer network just by monitoring the polymerization reaction conditions. It is well known that the sol-gel method for making oxide glasses using metal alkoxides has many advantages such as high purity, homogeneity, and low processing temperature over the conventional melting techniques. Among the silicon alkoxides, monomethys-trietoxysilane, CH3 Si(OC2 H5 )3 (MTEOS), has been widely used as one of the starting materials in the sol-gel method of making inorganic/organic compounds,2 elastic SiO2 coating films containing CH3 ,3 and Si–O –N glass fibers.4 Though appropriate mixtures of silicon alkoxides, such as tetraethoxysilane (TEOS) and MTEOS, were used to obtain protective coatings on stainless steel5 and on copper6 for industrial applications, there are relatively few reports that explore the physical properties of these materials. To our knowledge the structure of siloxane oligomers formed in the early stage of the sol-gel reaction (hydrolysis and polycondensation) of silicon alkoxides has been extensively studied by numerous techniques such as NMR,7 gas chromatography,8 small angle x-ray scattering,9 infrared,10 Raman spectroscopy,11 and quantum calculation,12 while no studies of the electronic properties have been performed. a)
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J. Mater. Res., Vol. 12, No. 1, Jan 1997
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Recently silica glass has become an important material in the integrated circuit (IC) fabrication process; for example, IC photomask substrate, furnace tube, and lens material for excimer stepper equipment, because of its high purity and high transparency in the ultravio
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