Symposium E
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The symposium Ion Implantation and Ion Beam Processing of Materials attracted 131 contributed and invited papers in which new and technologically important effects of ion beams on a wide variety of materials were presented and discussed. The number of papers was almost double that presented to the same conference in the fall of 1981. This, and the significant industrial support for the symposium, indicate an expanding interest in ion-beam oriented materials research and materials processing. The opening day featured ion mixing and the formation of metastable and amorphous materials by ion implantation. M-A. Nicolet from Cal Tech gave an introductory overview of ion mixing in the low temperature regime and suggested that a simple thermal spike model adequately accounts for the data for metals mixed with silicon. For a balanced view, H. Wiedersich from Argonne National Labs gave an invited talk on the high temperature regime and provided a comprehensive review of the possible compositional changes which can occur during bombardment by means of the interaction of defect fluxes with the substrate atoms. It was clear that ion mixing of almost any combination of materials are of current research interest, including metal/semiconductor, semiconductor/semiconductor, metal/insulator, and metal/polymer combinations. In the afternoon, S.T. Picraux from Sandia Labs reviewed mechanisms of formation of metastable materials and D.I. Potter from the University of Connecticut demonstrated the use of high resolution transmission electron microscopy techniques for monitoring the evolution of microstructures during implantation. A highlight was a spectacular movie by J. Bentley of Oak Ridge National Lab, who used transmission electron microscopy to monitor in real time a phase transformation front in Al that had been implanted with Mo to a concentration of 11 atomic %. This video was "R-rated" because it recorded the demise of the metastable solid solution phase as it was devoured by the relentless growth of the Al12Mo intermetallic phase during in-situ annealing. B.R. Appleton from Oak Ridge National Lab opened an eventful day of semiconductor papers by demonstrating that deep columnar voids are created under certain conditions during ion implantation of Ge, and J.M. Williams from Royal Melbourne Institute of Technology and C. Jaussaud from LETI, Grenoble, France, reported the voids of Ge and Si, and III-V compound layered structures, respectively. One important message was that one must be careful to check for fine scale morphological changes when ion implanting thin films. Progress on the understanding of the amorphization and regrowth of amorphous semiconductors was noteworthy with new aspects generated from papers on
GRAHAM HUBLER (left), WOODY WHITE, CLIVE CLAYTON, O.W. HOLLAND atomic imaging of displacement damage in Si and GaAs, regrowth models for Si and GaAs, thermodynamics of the crystallization of amorphous Si and Ge, and the dependence of the properties of amorphous Si and Ge on thermal history after implantation. It is
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