Synthesis and Dispersion of Ultra-Small Binary and Ternary Metal Oxide Nanoparticles for Dielectric Thin Films
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Synthesis and Dispersion of Ultra-Small Binary and Ternary Metal Oxide Nanoparticles for Dielectric Thin Films Tarik A. Cheema1, Dan Taroata2,3, Guenter Schmid2, Georg Garnweitner1 1
Technische Universität Braunschweig, Institute of Particle Technology Volkmaroder Str. 5, 38104 Braunschweig, Germany 2 Siemens AG, Corporate Technology - Global Technology Field Organic Electronics Guenter-Scharowsky-Str. 1, 91054 Erlangen, Germany 3 Technische Universität Dresden, Institute for Semiconductor and Microsystems Technology 01062 Dresden, Germany ABSTRACT Fabrication of dielectric thin films using dispersions of ultra-small ZrO2 and BaTiO3 nanoparticles with a low-temperature processing is reported. Highly crystalline and monodisperse cubic-ZrO2 and tetragonal-BaTiO3 nanoparticles were synthesized using nonaqueous approach. Post synthesis, nanoparticle dispersions were realized through chemical modification of their surface. The obtained dispersions were then employed for the fabrication of homogeneous and densely-packed dielectric thin films, verified through scanning electron microscopy. INTRODUCTION The miniaturization of electronic devices is a current topic of great interest. In this context, the miniaturization and integration of the active and passive components presently mounted on printed circuit boards (PCBs) is inevitable for the next generation electronic devices. Currently, the passive components alone (capacitors, resistors and inductors) in form of surface mount devices (SMDs) occupy up to 60 % of the total area of electronic circuits [1]; thus their direct integration into the PCBs is currently being studied. In this respect, many different approaches have already been pursued such as hydrothermal growth or atomic layer deposition of dielectric thin films on PCBs, yielding thin film capacitors with good dielectric properties [2, 3]. However, a severe disadvantage of these techniques is their difficult implementation in industrial scale PCB manufactures, either due to their complexity or their high processing costs. Cost effective and simple processes like sol-gel methods for the fabrication of dielectric thin films, which have successfully been reported for various substrates other than PCBs also cannot be considered as they require a high temperature (> 750 °C) sintering step after application to achieve films with high crystallinity and thus high permittivity, making them incompatible for direct integration into PCBs [4]. Alternatively, polymers as well as polymer based nanocomposites have been applied as thin film dielectrics which can be processed at low temperatures and therefore can be integrated into PCBs [5]. However, these materials result in capacitors with low integration densities (< 0.86 nF/mm2), which makes them unsuitable for the fabrication of high-capacitance capacitors as required for GHz devices. In this contribution, we report on the synthesis of ZrO2 and BaTiO3 nanoparticles that can be used to prepare ultra-thin homogeneous films suitable as thin dielectric layers for a novel generati
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