Synthesis of B-C-N Thin Films by Ion-Beam-Assisted Deposition and Their Mechanical Properties
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Synthesis of B-C-N Thin Films by Ion-Beam-Assisted Deposition and Their Mechanical Properties Akihito Matsumuro, Yoshimasa Kato and Hidenobu Ohta Department of Micro system Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan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
INTRODUCTION
Synthesis of a B-C-N compound film has been studied intensively in recent years, because of their possibility of new super-hard and semiconductor materials. Since then, many efforts have been made to synthesize thin films of cubic phase and layered structured B-C-N compounds by various CVD and PVD techniques. Atomic-level hybrid thin films of the three elements including B-C and C-N bonds and the mixtures of pyrolytic carbon and boron nitride have been reported [1-4]. However, the synthesis of cubic crystalline B-C-N compound thin films has not been established. In this study, we investigated the possibility of the synthesis of new crystalline phase B-C-N thin films by an ion-beam-assisted deposition (IBAD) technique. In fabrication of the films, Ar ion assist was carried out simultaneously with N-ion bombardment. The influence of the mixture gas rate ratio of Ar/N on the microstructure and the mechanical properties were investigated. EXPERIMENTAL DETAILS
B-C-N films with thickness of 300 nm were formed on Si(100) by IBAD with evaporation of C and B by electron beam and simultaneous bombardment of a mixed N and Ar ion beam at 1 keV. Mixed ions were irradiated at normal incidence and the total current density was fixed at 1 vA/cm2. The ratio of Ar ions to N ions (hereafter Ar ratio) was varied by the flow rate ratio of Ar and N2 gases fed into the ion source. The ratios have been chosen as 0, 17, 25, 50, 67 and 100 % in this experiment. The pressure was maintained at 1.5x10-2 Pa and temperature of the substrate was not controlled during deposition. The deposition ratios of C and B were fixed at 6 nm/s. More
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