Synthesis of gallium oxide via interaction of gallium with iodide pentoxide in plasma
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Synthesis of gallium oxide via interaction of gallium with iodide pentoxide in plasma Leonid Mochalov1,2 · Alexander Logunov1 · Daniela Gogova3 · Sergey Zelentsov4 · Igor Prokhorov1 · Nikolay Starostin4 · Aleksey Letnianchik4 · Vladimir Vorotyntsev1 Received: 25 July 2020 / Accepted: 27 October 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The promising fields of gallium oxide application are the production of hybrid cars, electrical equipment of high-power, ultraviolet radiation sensors and uninterruptible power supplies. However, the main factor hindering its massive commercial use is the lack of synthesis technologies, that should be cheap, reproducible, and scalable. In this work we develop a novel plasma-chemical method of G a2O3 synthesis. The high-purity elemental gallium was used as the precursor, which was delivered by argon flow to the reaction zone, where the interaction with iodide pentoxide took place. RF (40.68 MHz) non-equilibrium plasma discharge at low pressure (0.1 Torr) was employed for the initiation of interactions between precursors. Optical Emission Spectroscopy in tandem with quantum-chemical calculations allowed us to find out the reactive species formed in the plasma discharge. The properties of the solid phase obtained were studied as well. Keywords Gallium oxide · Plasma synthesis · Optical emission spectroscopy
1 Introduction Nowadays, gallium oxide is widely used in various optoelectronic devices both as active elements (various emitters) and to create transparent conducting electrodes (Granqvist 2006). Gallium oxide thin films are also utilized as antireflection coatings, in the development of gas sensors and full-colour screens (Fleischer and Meixner 1991). Besides, gallium oxide can serve as a gate dielectric in MOSFET transistors (Liu et al. 2019). The large band gap (4.85 eV, which is the third largest forbidden zone amid semiconductors) having been measured, the thermodynamically stable β-Ga2O3 phase seems to be the most
* Leonid Mochalov [email protected] 1
Nizhny Novgorod State Technical University n.a. R.E. Alekseev, Nizhny Novgorod, Russia
2
University of North Carolina at Charlotte, Charlotte, USA
3
University of Oslo, Oslo, Norway
4
Lobachevsky University, Nizhny Novgorod, Russia
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attractive representative of this class of materials for application in semiconductor devices operating in the UV and the Visible spectrum (Zatsepin et al. 2018). It should be mentioned that very high-quality Ga2O3 bulk crystals are possible to be synthesized from liquid phase that is one of the main excellences of G a2O3 compared to its main competitors in the realm of wide-bandgap materials, GaN or SiC. There are a few reliable techniques of growth from melt: Verneuil method, floating zone (FZ) method, Czochralski (CZ) method, Edge-defined film-fed growth (EFG) method, and Bridgman method (Pearton et al. 2018; Stepanov et al. 2016; Galazka 2018). Gallium oxide films may
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