synthesis of III-N x -V 1-x Thin Films by N Ion Implantation
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Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation K. M. Yu, W. Walukiewicz, W. Shan1, J. Wu, J. W. Beeman, J. W. Ager III, E. E. Haller, and M. C. Ridgway2 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720; 1 OptiWork, Inc. Fremont, CA 94538 2 Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia ABSTRACT Dilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-x thin films. The fraction of N occupying anion sites ("active" N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (
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