Systematic Characterization of Pseudomorphic (110) Intrinsic SiGe Epitaxial Films for Hybrid Orientation Technology with
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0913-D01-02
Systematic Characterization of Pseudomorphic (110) Intrinsic SiGe Epitaxial Films for Hybrid Orientation Technology with Embedded SiGe Source/Drain Qiqing (Christine) Ouyang1, Anita Madan2, Nancy Klymko2, Jinghong Li2, Richard Murphy2, Horatio Wildman2, Robert Davis2, Conal Murray1, Judson Holt2, Siddhartha Panda2, Meikei Ieong2, and Chun-Yung Sung2 1 T J Watson Research Center, S&TG, IBM, Route 134, Yorktown Heights, NY, 10598 2 S&TG, IBM, 2070 Route 52, Hopewell Junction, NY, 12533
ABSTRACT PFETs with embedded SiGe source/drain on HOT substrates have shown significant performance improvement compared to PFETs with embedded SiGe on (100) SOI substrates. In this paper, we report a systematic material characterization on the epitaxial SiGe films, both blanket and patterned, on (110) and (100) substrates, using an array of methods such as XRD AES, UV Raman, AFM, and TEM, and corresponding PFETs performance data. INTRODUCTION To exploit the higher mobility of holes on (110) and electrons on (100) substrates, two types of techniques have been developed in order to monolithically integrate different crystal orientations -- one is the hybrid orientation technology (HOT) [1]; and the other is the mixed orientation formed by direct silicon bonding (DSB) and followed by a solid phase epitaxy (SPE) [2]. Meanwhile, various techniques have been used to introduce uniaxial stress in MOSFET channel areas and improve the performance of the conventional devices. In particular, SiGe embedded in the source/drain (S/D) on HOT has been demonstrated to further enhance the pFET performance [3]. In this paper, we report a systematic study on the intrinsic pseudomorphic SiGe epi films on (110) Si substrate and explore the opportunities of fabricating strained channels on HOT substrates. EXPERIMENTAL DETAILS Commercially available semiconductor equipment for rapid thermal chemical vapor deposition (RTCVD) was used to deposit Si(1-x)Gex (where 'x' is the Ge composition) thin films with basic germane and DCS chemistry. Blanket films of nominal 10% and 15% Ge and thicknesses 49-90 nm were deposited on 300 mm (100) and (110) silicon wafers at a temperature of 7500C and well characterized before deposition on patterned device wafers. Epitaxial growth rate on (110) substrates was 30% lower than that of (100), while it was 30% higher on patterned wafers compared to blanket wafers because of loading effects. These SiGe films were characterized using X-ray Diffraction (XRD), Auger and Raman to correlate different techniques for measuring Ge composition and the amount of strain. A Bede X-ray diffractometer using monochromatic CuKα (wavelength λ = 1.5406Ǻ) radiation was used for rocking curve measurements around the Si (110) reflection. Auger Electron Spectroscopy (AES) data was collected on either a ULVAC-PHI SmartTool or Model 650 scanning Auger
microprobe, using 20 nA (ST) or 100 nA (650) at 10 kV. Alternate sputtering with a 2 kV Ar+ beam was used for depth profiling. For quantification, undoped blanket SiGe films, analyzed by Ruthe
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