Temperature Dependent Electrical and Dielectrics Properties of Metal-Insulator-Metal Capacitors with Alumina-Silicone Na
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Temperature Dependent Electrical and Dielectrics Properties of Metal-Insulator-Metal Capacitors with Alumina-Silicone Nanolaminate Films Santosh K. Sahoo,1 Rakhi P. Patel,1 and Colin A. Wolden1 1
Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, Colorado 80401, USA ABSTRACT Alumina-silicone hybrid nanolaminate films were synthesized by plasma enhanced chemical vapor deposition (PECVD) process. PECVD allows digital control over nanolaminate construction, and may be performed at low temperature for compatibility with flexible substrates. These materials are being considered as dielectrics for application such as capacitors in thin film transistors and memory devices. Temperature dependent electrical and dielectric properties of the nanolaminate dielectric films in metal-insulator-metal structures are taken in the range of 200340 K to better asses their potential applications for different devices. It is observed that the frequency dependent dielectric constant (İr) and ac conductivity (ıac) increase with the temperature. Both quadratic (Į) and linear (ȕ) voltage coefficient of capacitance (VCC) increases as the temperature increases. The temperature co-efficient of capacitance (TCC) decreases from 894 to 374 ppm/K as the Al2O3 composition increases in the alumina/silicone nanolaminates. Activation energy (Ea) for hopping conduction mechanism varies from 0.011 eV to 0.008 eV as the alumina composition increases from 50 to 83.3%.
INTRODUCTION There are many studies about the dielectric and electrical properties of different thin films because of their importance for various electronic device applications. There is an increasing need to develop high quality metal-insulator-metal (MIM) capacitors for both analog and mixedsignal applications. Ideally these materials provide a high capacitance density as well as low leakage current density under the conditions of operation. Low dielectric loss (tanį) is critical for RF and microwave device applications [1], while a low voltage co-efficient of capacitance (VCC) has been targeted by the international technology roadmap for semiconductors (ITRS) for analog applications [2,3]. Meeting all of the above requirements with a single material is proving to be a formidable challenge, particularly for applications requiring flexibility. The temperature and frequency dependent study of dielectric constant and ac conductivity (ıac) is very important to examine the charge carrier conduction mechanism in the insulators. Capacitors on flexible substrates often employ multilayer structures comprised of polymer and inorganic layers to provide flexibility and dielectric strength, respectively [4]. These hybrid organic-inorganic dielectrics are being pursued to serve a number of roles to enable flexible opto-electronics [5,6]. Thin film transistors (TFTs) are an important component in low cost, large area electronics such as flat panel displays and smart cards. The quality of the dielectric layer can significantly impact TFT performance, particularly when us
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