The Effect of Implantation and Annealing Conditions on the Fe Profile in Semi-Insulating InP.
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THE EFFECT OF IMPLANTATION AND ANNEALING CONDITIONS ON THE Fe PROFILE IN SEMI-INSULATING InP. G. BAHIR,* J. L. MERZ,* J. R. ABELSON,** AND T.W. SIGMON**. *Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 ** Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305 ABSTRACT The Fe depth distribution has been measured in semi-insulating (SI) InP implanted with Si as a function of implant temperature and post-implant annealing technique (either furnace annealing or rapid thermal annealing). Depth profiles obtained by secondary ion mass spectrometry and Rutherford backscattering measurements of the damage demonstrate that Fe redistributes into regions of residual damage during thermal processing. These results are interpreted in terms of implantation-related damage effects and the stoichiometry imbalance induced by the Si implantation. INTRODUCTION InP is becoming increasingly of technological interest with regard to optoelectronic and microwave devices. It is envisioned that the ion implantation process, due to its control and reproducibility, will be used in the manufacture of such devices. However, the ion implantation process requires high temperature annealing after implantation to provide both regrowth of the damaged substrate and electrical activation of the implanted impurity. The behavior of transition metals and dopants in InP is receiving increased attention because of the important role they play in controlling the electrical resistivity. Device fabrication requires semi-insulating (SI) substrates, and Fe is presently the most common compensating impurity for InP. One goal of the present day integrated circuit technology is to understand the behavior of this compensating dopant in InP during thermal processing. In a recent Secondary Ion Mass Spectrometry (SIMS) study, Gauneau et al. [1,2] examined an amorphizing room-temperature (RT) Fe implant into undoped InP with subseqent furnace annealing (FA). Two peaks separated by a depleted region develop during the anneal; their peaks are located approximately at 0.8 RP and RP+ARP, where Rp and ARP are the projected range and straggle of the implant, respectively. The peak at 0.8Rp was attributed by Gauneau to gettering by implant damage. The second peak is thought to occur in a region of nonstoichiometry induced by preferential knock-on during the implant. These observations and explanations are consistent with previous studies of Cr diffusion into GaAs [3-5]. Schwarz et al. [6] reported on SIMS and transmission electron microscope (TEM) studies of Fe implants performed at either RT or 2000 C. In particular, they found no evidence of an Rp+ARp peak in the FA annealed 200'C implant. In this paper we report on the SIMS study of Fe redistribution in Si-implanted SI InP as a function of the implant temperature of the substrate, and the post-implant thermal processes, furnace annealing (FA) or rapid thermal annealing (RTA). These results are correlated with Rutherford backscattering (RBS) measurement
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