The Effect of Plasma Treatment on the SiO 2 film fabricated without Substrate Heating for Flexible Electronics
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1078-M08-03
The Effect of Plasma Treatment on the SiO2 film fabricated without Substrate Heating for Flexible Electronics Sun-Jae Kim1, Sang-Myeon Han2, Seung-Hee Kuk1, Dong-Won Kang1, and Min-Koo Han1 1 Seoul National University, Seoul, Korea, Republic of 2 Samsung electronics, Asan, Korea, Republic of
ABSTRACT Silicon dioxide (SiO2) films were deposited on crystalline silicon substrate using inductively coupled plasma chemical vapor deposition (ICP-CVD) system. In this paper, various process parameters, such as gas flow rate, ICP RF power and process pressure were discussed for the investigation of deposition of SiO2 film. And electrical properties of the SiO2 film were investigated. Since there was no external heating on the substrate during the deposition, the SiO2 film showed poor electrical characteristics, such as shifted flat-band voltage and high effective charge density. We have proposed helium plasma pre-treatment in order to reduce the interface fixed charge and hydrogen plasma post-treatment for the passivation of interface defect. Our experimental results show that helium plasma pre-treatment supply thermal energy for decomposition of reactant gas and also remove effective charges. Hydrogen post-treatment also enhances electrical characteristics. We measured the effect of the plasma treatment using FT-IR spectrum and C-V characteristics. INTRODUCTION Recently, flexible display is attracting considerable attention. To fabricate active matrix organic light emitting diodes (AMOLEDs) or active matrix liquid crystal displays (AMLCDs) on the flexible substrate, very low temperature process is required because thermal energy could deform the flexible substrate. However, it is difficult to obtain a high quality silicon or dielectric material under low temperature process. SiO2 film fabricated at low temperature exhibits poor electrical characteristics, such as a large flat-band voltage, high interface trap densities, and hysteresis in the C–V curve.([1] and [2]) Many efforts have been reported to obtain a high quality insulator film at low temperature (< 200oC) employing various deposition methods. Inductively coupled plasma chemical vapor deposition (ICP-CVD) system generates high density plasma, so that it may enhance the decomposition process under low temperature. And it also employs remote plasma so that plasma damage onto the substrate could be reduced compared with conventional deposition methods.([3] and [4]) The purpose of our work is to report the fabrication of SiO2 film using ICP-CVD without substrate heating and the improvement of the film with plasma treatment. We investigated the effect of parameters such as ICP RF power, process pressure and gas flow rates. And we investigated electrical characteristics of SiO2 film deposited without external heating. The initial temperature was set to room temperature. The reactant gases were SiH4 and N2O and the dilution gas was helium. The SiO2 film fabricated without substrate heating showed poor electrical characteristics such as large flat-band voltage
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