The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition
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ABSTRACT We report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InAs/InPSb/InAs as well as mid-infrared optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb cladding layers and strained, type I, InAsSb/InAs/InPSb/InAs strained layer superlattice (SLS) active regions. By changing the layer thickness and composition of the SLS, we have prepared structures with low temperature ( - 13/2,±3/2>) hole splitting to suppress non-radiative Auger recombination. Recently, Bewley et al. have reported record high output powers and operating temperatures for mid-infrared InAs/GaInSb/AlAsSb type II optically pumped lasers using a diamond-pressure-bond heat sinking technique [4]. We are currently exploring the growth of new emitter structures as well as the use of novel materials in these structures to improve our laser performance. In an attempt to further reduce the Auger recombination by increasing the hole confinement, we have used InPSb in place of InAsP as the barrier layer in the active region. We have reported an initial study on the synthesis and properties of these InAsSb/InPSb SLSs grown by MOCVD [5]. In this previous work we reported on the presence of an anomalous low energy transition that can be assigned to an antimony rich interfacial layer. This paper further explores the properties of these novel superlattices including the elimination of the anomalous transition and improvement of the photoluminescence and lasing properties through the addition of an InAs interfacial layer.
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Mat. Res. Soc. Symp. Proc. Vol. 607 0 2000 Materials Research Society
EXPERIMENTAL The InAsSb/InPSb and InAsSb/InAs/InPSb/InAs SLSs were grown by MOCVD on undoped n-type InAs substrates. We optimized the growth of these structures by first investigating the growth of InAsSb/InAs and InPSb/InAs SLSs. We investigated the InAsSb/InPSb SLS growth using different purge times (1, 3, and 5) seconds with and without arsine flowing during the purge between InAs and the ternary layer growth. This was done to determine the effect of an arsine purge on the quality of the photoluminescence for the SLSs. A low V/III ratio is necessary for the growth of high quality InAsSb. Due to the low vapor pressure of Sb, excess Sb tends to cause surface morphology defects. For InPSb, the V/III ratio is dominated by the excess phosphine flow. A high V/III ratio and excess phosphine flow are necessary because of the high decomposition temperature of phosphine. In both cases, InAsSb/InAs and InPSb/InAs, the composition dependence was reproducible and approximately linear versus AsH 3 flow for InAsSb and TESb flow for InPSb for the composition range that was examined. The SLSs were grown at 500 or 550 TC and 70 torr in an Emcore D75 high speed rotating disk reactor at 1100 rpm. The sources used were trimethylindium (TMIn), triethylantimony (TESb), 100% or 10 % AsH 3 in hydrogen, and 100 % PH 3. The carrier gas and its quantity were 15 liters of hydrogen. T
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