The Impact of Displacement Defect in Nanosheet Field Effect Transistor
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ORIGINAL ARTICLE
The Impact of Displacement Defect in Nanosheet Field Effect Transistor Jungsik Kim1,2 Received: 9 July 2020 / Revised: 9 October 2020 / Accepted: 2 November 2020 © The Korean Institute of Electrical Engineers 2020
Abstract Anomalies due to random displacement defect is investigated in a 5 nm nanosheet gate-all-around field effect transistor (NS-FET). Terrestrial cosmic radiation is known to cause silicon displacement in random location. In this work, the random displacement anomaly (RDA) is investigated in NS-FET with the aid of technology computer aided design (TCAD). The fluctuation due to RDA is considered as a variable and its impact on the electrical characteristics is investigated for various width and thickness values of the NS-FET. The contribution to the RDA in individual NS layers is studied. The worst degradation rate of drain current is almost 20% while RDA is located at center of top layer in NS-FET. Keywords Random displacement anomaly (RDA) · Displacement defect · Single trap · Nanosheet FET · Cosmic ray · Terrestrial radiation · Technology computer-aided design (TCAD)
1 Introduction Silicon nanosheet (NS) gate all around field effect transistor (FET) has been considered as a beyond FinFET technology for sub-5 nm technology node because it offers less parasitic capacitance and patterning challenges [1, 2]. Furthermore, the performance of NS device can be improved through multi-stacked channel layers [3]. Meanwhile, it is intrinsically impossible to offer defect-free perfect crystal since defects can be introduced anytime from ingot manufacturing, wafer fabrication, or even on-the-fly. Imperfect epitaxial growth of silicon channel and lateral straggle of impurities in ion-implantation can introduce point defects [4–6]. The terrestrial radiation due to alpha decay and cosmic neutrons from outer space continuously tamper with semiconductor devices on the ground level [7]. The radiation-induced displacement damage effects have been of interest primarily in space and military applications [8]. The impact of the displacement defects were disregarded in the past in nonmilitary/space applications since that effect is negligible due * Jungsik Kim [email protected] 1
Department of Electrical Engineering, Gyeongsang National University, Jinju, Gyeongnam 52828, Republic of Korea
Engineering Research Institute (ERI), Gyeongsang National University, Jinju, Gyeongnam 52828, Republic of Korea
2
to the large size devices relative to a few silicon voids. We herein investigate the impact of the terrestrial radiation at sea level on all devices for technology nodes beyond 5 nm. As opposed to widening width of the channel in 2D devices, increasing the number of stacks in 3D devices enables to reduce the track height of standard logic. Then the width and thickness of the NS approach the size of displacement damage cluster or even the thickness of few atoms. The terrestrial neutron spectrum at New York sea level ranges from a few meV to a few GeV and the flux of the peak regime between 1 to
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