The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO 2 :nc-Si
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The Influence of Annealing Temperature and Doping on the Red/NearInfrared Luminescence of Ion Implanted SiO2:nc-Si D.I. TETELBAUM, V.A. BURDOV, S.A. TRUSHIN, and A.N. MIKHAYLOV Physico-Technical Research Institute of Nizhnii Novgorod State University, 603950, Nizhnii Novgorod, Gagarin prospect, 23/3, Russia D.G. REVIN, and D.M. GAPONOVA Russian Academy of Science Institute of Physics for Microstructures, 603600 Nizhnii Novgorod, GSP – 105, Russia ABSTRACT The results of an experimental research of the dependence of photoluminescence (PL) intensity in region about 800 nm for silicon nanoinclusions (quantum dots) obtained by Si ion implantation in SiO2 on the dose of Si ions at two temperatures of an annealing Тann = 1000 and 1100o С are presented. It is established that in both cases the dependences have the shape of the curves with a maximum. For 1100o С the maximum is shifted to the lower dose. The influence of an additional ion doping by the phosphorus on intensity of PL is investigated depending on the dose (concentration) of P and the dose of the silicon at Тann = 1000o С. It is shown, that in all the investigated region of P doses, the presence of P enhances the PL. The degree of the enhancement increases with the P dose, but the rate of the intensity enhancement goes down. With the growth of Si dose at the constant dose of P, the degree of the enhancement decreases. In an approximation of an effective mass, the energy spectra of a quantum dot are calculated at the presence of one or several P atoms for various their arrangement. INTRODUCTION The system of silicon nanoinclusions (NI) in SiO2 (SiO2:nc-Si) attracts the great attention in connection with the prospects of its use in the silicon optoelectronics. Ion implantation is one of the most common methods of the SiO2:nc-Si production [1-5]. The important parameter is the intensity of the photoluminescence (IPL) for the constant intensity of the excitation. This is especially important taking into account a small thickness of nc-Si layer for ordinarily ion energies. Generally, IPL depends on the several factors: NIs number, their sizes, the availability and the concentration of the centers of a nonradiative recombination. These factors are sensitive to the conditions of the ion implantation (ion energy and dose), the conditions of the annealing (temperature and time), and also the presence of the impurities. In [6,7] was shown that for a fixed annealing temperature Тann = 1000o С (the annealing time, tann = 2 hours), IPL can be adjusted by the choice of a dose. At that, the sizes of NI practically do not vary, and their density grows. The IPL growth proceeds up to the dose for which the NI joining begins due to their high concentration. Also, it was established that IPL can be essentially increased by the additional implantation of phosphorus. The position of the PL peak occurs practically independent on the phosphorus doses. In the report, the results of a prolongation of these investigations are presented. The dependence of IPL on the dose of silicon was tak
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