The Influence of Xenon and Argon Ion Irradiation Parameters on Defect Formation in Silicon
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OPHYSICS, ELECTRONICS, ACOUSTICS
The Influence of Xenon and Argon Ion Irradiation Parameters on Defect Formation in Silicon Yu. V. Balakshin1, 2* , A. V. Kozhemiako3 , A. P. Evseev1, 3 , D. K. Minnebaev1, 3 , and Emad M. Elsehly4 1 2
Institute of Nuclear Physics, Moscow State University, Moscow, 119991 Russia Quantum Technology Center, Moscow State University, Moscow, 119991 Russia 3 Department of Physics, Moscow State University, Moscow, 119991 Russia 4 Damanhour University, Faculty of Science, Damanhour, Egypt Received March 11, 2020; revised March 16, 2020; accepted March 20, 2020
Abstract—Single-crystal silicon has been irradiated with xenon ions at energies of 100 and 200 keV and argon ions at 110 keV. The irradiation fluence varied in the range of the displacement per atom (dpa) from 0.1 to 1 for both types of ions and selected energies. The influence of irradiation on the destruction of the silicon structure was studied using Rutherford backscattering (RBS) combined with channeling and Raman scattering (RS). The stages of silicon crystal structure destruction based on RBS and RS for different irradiation fluences are demonstrated. It is shown that defects accumulate in the modified layer as the fluence increases to a value corresponding to 0.5 dpa; then highly defective regions merge into amorphous layers. At a dpa of 1, the structure of a single crystal does not become disordered. Keywords: ion irradiation, defect formation, Rutherford backscattering, Raman scattering. DOI: 10.3103/S0027134920030030
INTRODUCTION The current level of development of technology implies the creation and application of nanometer scale objects, as well as modification of their properties. In particular, this occurs in such fields as nanoelectronics, optics, hypersensitive sensorics, and medicine, where the possibilities of practical application of such structures as dielectric layers of nanometer thickness, single-atom transistors, nanopores and nanowires, porous structures, carbon nanotubes, etc. are actively investigated [1–5]. The studied objects may be emitters or absorbers at certain wavelength ranges, individual elements of nanoelectronics, means of drug delivery or hydrogen storage, active regions of gassensitive sensors, etc. Much attention is paid to the influence of defects in the atom location structure on the physical properties of objects. Defect formation under the influence of irradiation is considered not only as a parasitic effect but also as an opportunity to give unique properties to the irradiated material. A number of works [6, 7] have shown the influence of the impurity atom–stacking fault structure on luminescence properties of synthetic diamonds. It was *
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experimentally shown that the creation of defects in the structure of carbon nanotubes significantly affects the properties of arrays of tubes due to breakage and replacement of chemical bonds [8, 9]. Beams of charged particles are actively used in the formation of nanoscale objects [10] and in modifying the properties of surface layers
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