The nucleation and growth of nano-structured diamond on phosphor and boron ions implanted Si substrates
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The nucleation and growth of nano-structured diamond on phosphor and boron ions implanted Si substrates C. Z. Gu1, L. Wei1, Y. Sun2, J. K. Jia2 and Z. S. Jin2 1 State Key Laboratory for Surface Physics, Institute of Physics, 100080 Beijing, China 2 State Key Laboratory for Superhard Materials, Jilin University, 130023 Changchun, China ABSTRACT Nanocrystalline diamond films deposited by microwave plasma chemical vapor deposition (MWPCVD) method were observed on Si substrates implanted with phosphor (P) and boron (B) ions at room temperature via scanning electron microscopy (SEM). The relations between the species, energies and doses of implanted impurities and the nucleation, grain size and morphology of diamond were studied. The results present that different nucleation density from 106 cm-2 to 109 cm-2 can be obtained on implanted and unscratched Si, which is larger of 3-6 magnitude orders than that on mirror-polished Si. The nano-structured diamond films can be deposited on scratched Si substrates implanted by higher concentration of phosphor and boron ions. The grain sizes of nano-structured films can be adjusted by controlling the implanted energies and doses, and nano-structured films can be synthesized with low impressive stress. The Raman spectroscopy was employed to analysis the phase purity of nano-structured film, which shows a broad peak at around 1150 cm-1 relative to the nano-structured and tetrahedrally bonded carbon network. Keywords: diamond nucleation and growth, nano-structured film, ion implantation INTRODUCTION Nano-structured diamond films with extremely high grain boundary density have been attracting rapidly increasing interest in material science area, because they have the potential of revolutionizing traditional micrometer-structured films in many applications via atomic-level control in structure. An attractive characteristic of nanocrystalline diamond is electron emission as cold cathode emitters at low electrical filed. Recently, many researchers have focused their works on the synthesis and properties of nano-structured diamond films and developed some active growth methods. For examples, Gruen et al. reported the preparation of nanocrystalline diamond films on scratched Si substrates by using hydrogen-poor argon plasma [1]; Schaller et al. described the surface properties of nano-diamond films deposited by electrophoresis method on plat Si (001) using nanometer-sized diamond particles [2]. In our previous works, we successfully prepared nanocrystalline diamond films with controlled grain size by continuous H+ ion bombardment during the deposition, but the films generally companied with increased impressive stress with increasing the
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Table 1 Implanted energies and doses for the P and B
Samples
Implanted specimens
Energy (KeV)
No.1 No.2
P P
60 60
No.3
B
65
No.4
B
35
Dose (ions/cm2)
D 5D
5
15 11 15 11
film thickness [3], the high compressive stress in nanocrytalline diamond films deposited by MWPCVD via ion bombardment under the bias is also confir
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