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THE STUDY OF FLUORINATED AMORPHOUS CARBON AS LOW-K DIELECTRIC MATERIAL AND ITS INTERFACE WITH COPPER METALLIZATION N. Ariel*, M. Eizenberg*, and E. Y. Tzou** Dept of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel "Applied Materials, Santa Clara 95124, CA ABSTRACT In order to achieve better performance of devices, the interconnects RC delay time, the limiting factor of the device speed today, must be reduced. This calls for a new interconnect stack: lower resistivity Copper and low k materials (k

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