Theoretical Analysis of the Electrical and Optical Properties of ZnS
This chapter deals with the electrical and optical properties of ZnS by using the first principle plane-wave pseudopotential technique [ab initio Technique]. The obtained results show that the bandgap of ZnS system becomes narrow under the transition stat
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Abstract This chapter deals with the electrical and optical properties of ZnS by using the first principle plane-wave pseudopotential technique [ab initio Technique]. The obtained results show that the bandgap of ZnS system becomes narrow under the transition state condition, and also it changes the conductivity of ZnS from semiconductor to metal behavior. Zinc sulfide is a direct bandgap-type non-toxic semiconductor material. Moreover, it is used as an optical device. The above-mentioned properties show that the ZnS is a favorable candidate for luminous materials as well as solar photovoltaic cell. Doping of rare earth element and transition element in ZnS is used as a good phosphor material. Keywords CASTEP Raman spectra
Bandgap Dielectric Reflectivity IR spectrum
A. Pattnaik (&) B. Prasad Department of Energy & Environment, TERI University, Vasant Kunj, New Delhi 110070, Delhi, India e-mail: [email protected] V. Gupta Department of Physics & Astrophysics, University of Delhi, New Delhi 110007, Delhi, India M. Tomar Departments of Physics, Miranda House College, University of Delhi, New Delhi 110007, Delhi, India P.K. Jha Dindayal Upadhyay College, University of Delhi, New Delhi 110078, Delhi, India A.K. Bhoi Department of Electrical & Electronics Engineering, Research & Development Section, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Majitar, India e-mail: [email protected] © Springer Nature Singapore Pte Ltd. 2018 A. Konkani et al. (eds.), Advances in Systems, Control and Automation, Lecture Notes in Electrical Engineering 442, https://doi.org/10.1007/978-981-10-4762-6_2
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1 Introduction The non-toxic and wide bandgap semiconductor materials of the II–VI group such as zinc sulfide, zinc selenide, cadmium selenide, and cadmium sulfide are used as photo and electroluminescence materials. Zinc sulfide has a direct and wide bandgap semiconductor material (3.73 eV) along with the large band energy of exciton (37 meV). The above-mentioned properties signify that zinc sulfide is a favorable material for optical devices like ultraviolet LEDs [1–3], flat-panel displays [4, 5], solar photovoltaic cells [6], and sensor devices [7]. Zinc sulfide is an inorganic material which is in the form of sphalerite (cubic form) or zinc blende and wurtzite (hexagonal form). The material is an intrinsic semiconductor with a wide bandgap of about 3.54 eV for a cubic form of ZnS and 3.91 eV for hexagonal form. Such types of semiconductors are suitable for the analysis of discrete energy level states in the bandgap [2, 8, 9]. The optical, electrical, and electronic properties of semiconductors are likely to be characterized by the help of reflectivity, absorption spectra, and vibrational spectroscopy. The above optical constants depend upon photosensitive bandgap of the material. In this work, the band structure, the density of states (DOS), dielectric functions, refractive index, absorption spectra, reflectivity, optical conductivity, and vibrational spec
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