Vanadium Doped ZnS Nanoparticles: Effect of Vanadium Concentration on Structural, Optical and Electrical Properties
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Transactions on Electrical and Electronic Materials https://doi.org/10.1007/s42341-020-00265-1
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Vanadium Doped ZnS Nanoparticles: Effect of Vanadium Concentration on Structural, Optical and Electrical Properties Md. Sohel Rana1 · Sujan Kumar Das1,2 · Md. Obaidur Rahman1 · Farid Ahmed1 · Md. Abul Hossain1 Received: 30 May 2020 / Revised: 11 September 2020 / Accepted: 9 November 2020 © The Korean Institute of Electrical and Electronic Material Engineers 2020
Abstract Vanadium (V) doped zinc sulfide (ZnS) nanoparticles have been synthesized in the doping concentration of 0.2, 0.4, 0.6, 0.8, and 1 wt% by chemical co-precipitation method, where de-ionized water was used as solvent and the precursors were Zn(CH3COO)2⋅2H2O, Na2S and V 2O5. The synthesized nanoparticles have been characterized by XRD, UV–Vis spectroscopy, FTIR spectroscopy and precision impedance analyzer (PIA). XRD studies revealed that all the samples exhibit cubic structure and confirmed the incorporation of V into ZnS lattice. The calculated average crystallite size was varied in the range of 2.16–2.82 nm. The red shifting of the absorption edge was observed from the UV–Vis study and the direct optical band gap ( Eg) was decreased from 3.63 to 3.35 eV with increasing the doping concentrations. The various vibrational modes were observed by the FTIR spectroscopy. The characteristic vibrational peaks were found near at 666, 615 and 478 cm−1. The PIA study showed that frequency dependent dielectric constant, loss tangent and ac resistivity were high at the lower frequency, while the ac conductivity was low at higher frequency. The bandgap tuning behavior of ZnS nanoparticles with V-doping concentrations may find interesting applications in optoelectronic devices. Keywords ZnS nanoparticles · Vanadium · XRD · UV–vis · FTIR · PIA · Co-precipitation
1 Introduction Nowadays, semiconductor nanoparticles have become more favorite to researchers for their possibility to use in optoelectronic-based devices such as detectors, sensors, displays, solar cells, etc. with comparable to their bulk crystals [1–4]. When doping is done on these materials, energy states and surface states are tuned properly and can be effective routes in many broad applications. Among different semiconductor materials, ZnS is one of the first discovered semiconductors [5] which is an inorganic material of group II-VI. ZnS arises in the two forms: zinc blende (band gap ~ 3.54 eV at 300 K) and hexagonal wurtzite (band gap ~ 3.91 eV at 300 K) [6]. For this wide energy band gap compared to bulk, it has high transmittance in the visible region and it is considered to be * Sujan Kumar Das [email protected] 1
Department of Physics, Jahangirnagar University, Savar, Dhaka 1342, Bangladesh
Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
2
the potential candidates as a buffer layer for solar cells application and highly suggested for ultra-violet applications [7]. Many groups
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