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1. C. S. Smith: Trans. TMS-AIMF,, 1958, vol. 212, p. 374. 2. G. E. Dieter:Response of Metals to High Velocity Deformation, P. G. Shewmon and V. F. Zackay, eds., p. 409, IntersciencePublishers,New York, 1961. 3. O. Johari and G. Thomas:AetaMet., 1964, vol. 12, p. 1153. 4. F. 1. Grace:Z AppL Phys., 1969, vol.40, p. 2649. 5. M. F. Roseand M. C. Inman:Phil. Mag., 1969, vol. 19, p. 925. 6, L. E. Murrand M. F. Rose:Phil. Mag., 1968, vol. 18, p. 281. 7. M. F. Roseand F. I. Grace:Brit. J. Appl. Physics, 1967, vol. 18, p. 671. 8. R. G. McQueenand S. P. Marsh:J. Appl. Phys., 1960, vol. 31, p. 1253. 9. D. C. BriUhart,A. G. Preban,and P. Gordon:Met. Trans., 1970, vol. 1, p. 969. 10. F. I. Grace: Ph.D. Thesis,PennsylvaniaState University,1967. 1I. H. Hu, R. S. Cline,and S. Gordon:Recrystallizatlon, Grain Growth, and Textures, p. 295, AmericanSocietyfor Metals,MetalsPark, Ohio, 1966. 12. J. S. Koehler:Universityof lllinois,Urbana, Ill, privatecommunication. 13. T. Kinoand J. S. Koehler:Phys. Rev., 1967, vol. 162, p. 632. 14. L. F. Trueli:J. Appl. Phys., 1969, vol. 40, p. 2976. 15. L. F. Trueb: DenverResearchInstitute,Denver,Colo.,private communication.

Thermal Oxidation of Polycrystalline Silicon Films

icon deposited at 650~ had a very small grain size, it was quite reflecting and, therefore, did not require subsequent polishing. Lightly doped s i n g l e - c r y s t a l s a m p l e s p l o t t e d a s f u n c t i o n s o f t h e o x i d e t h i c k n e s s on t h e (111} s a m p l e s o x i d i z e d a t t h e s a m e t i m e . In g e n e r a l , t h e p o l y c r y s t a l l i n e s i l i c o n d e p o s i t e d a t 650~ o x i d i z e d s l o w e r t h a n t h e s a m p l e s d e p o s i t e d at h i g h e r t e m p e r a t u r e s . The oxidation r a t e s of the h i g h - t e m p e r a t u r e s a m p l e s w e r e n e a r l y e q u a l , a l t h o u g h s a m p l e s d e p o s i t e d a t 1100~ a p p e a r e d t o o x i d i z e s l i g h t l y f a s t e r t h a n t h o s e d e p o s i t e d a t 1020~ D a t a f o r s a m p l e s o x i d i z e d at 1200~ a r e s h o w n in T a b l e I; l e s s t h a n 5 p c t s p r e a d b e t w e e n t h e v a r i o u s samples was found for each oxidation condition.

T. I. KAMINSAND E. L. MacKENNA

THE

use of thin films of polycrystallinesilicon has recently become of importance in the fabrication of silicon device structures such as silicon-gate MOS integrated circuits.I Since polycrystallinesilicon has been observed to oxidize at a different rate than (111 >oriented, single-crystal silicon under some oxidation conditions, a brief study of the oxidation rate was performed.

DISCUSSION Thermal oxidation of single-crystal silicon is generally divided into two regions.2 At low temperatures or for thin films, the growth rate is limited by the reaction rate at the silicon surface. For thicker films or longer oxidation times, the oxide growth is limited by diffusion of the oxidizing species through the previously formed oxide. We expect to see marked differQ6

METHOD In this study, polycrysta