Thin Film Integral Capacitor Fabricated on a Polymer Dielectric for High Density Interconnect (HDI) Applications
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KYUNG W. PAIK* AND TOH-MING LU** *Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering, Taejon, Korea "**Rensselaer Polytechnique Institute, Department of Physics, Troy, NY, USA
ABSTRACT The expanding needs of mixed signal applications of thin film MCM technologies which combine analog, digital, power and opto-electric devices require a wide range of integral, thin film, passive components within the MCM structure. There is a need to incorporate these passive elements into the interconnect structure to reduce component count, decrease substrate area and to improve electrical performance. In this study, we investigated advanced material and processing technologies for the in situ formation of capacitor components during the fabrication of multilayer polymer/copper interconnect structures. Amorphous BaTiO 3 film having a dielectric constant of 10 to 40 depending on stoichiometry was deposited on a surface roughness controlled metallized polyimide surface at room temperature using the reactive partial ionized beam (RPIB) technique. Simple metal/insulator/metal(MIM) capacitors were fabricated and characterized. Hundreds of pF capacitance with 1,000[3]. However, the processing temperature of crystalline BaTiO 3 is not compatible with copper/polyimide structure. The next highest dielectric constant materials are amorphous oxides such as TiO 2, TaO., and BaTiO 3. The dielectric constant ranges from 10 to 100. Deposition temperature of these materials is significantly reduced by using the reactive partial ionized beam(RPIB) technique to be compatible with MCMD and -L processing[4]. In this study, we studied advanced amorphous BaTiO3 material and its low temperature deposition technique for the formation of integral capacitor components in the course of fabricating multilayer processing of polymer/copper interconnect structures. After thin film integral capacitor fabrication, capacitor characteristics and its reliability were investigated.
EXPERIMENTS --heaters '------'-7 (t o6001C)
Amorphous BaTiO 3 film was deposited on a metallized polyimide surfaces such as Kapton H, E, and Upilex at room temperature using the RPI's reactive partially ionized beam (RPIB) technique as shown in Fig. 1. The surface roughness of metal surfaces was controlled to The guarantee defect-free deposition. technique utilizes a small fraction of ionized species from vaporized TiO and 02 to bombard the growth front during deposition. The ion bombardment during film growth leads to the formation of dense oxide films at low substrate temperature. The base vacuum of the chamber is 1X1O"7 Torr. During the deposition, pure 02 gas was introduced into the chamber through a leak-control valve to establish a 6X10 5 Torr pressure. TiO and Ba are vaporized by the use of electron bombardment and resistive heating, respectively. The TiO and 02 molecules are partially ionized at the outlet of the crucible due to electron impact. The partially ionized beam is accelerated to the substrate by an applied electric field
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