Topographical and chemical surface modification of porous MSQ using silylating agents with different numbers of methoxy
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0914-F04-04
Topographical and chemical surface modification of porous MSQ using silylating agents with different numbers of methoxy groups Casey Smith1, Dennis Mueller2, Phil Matz3, and Rick Reidy1 1 Materials Science, University of North Texas, 3940 N. Elm St., Denton, TX, 76207 2 Physics, University of North Texas, Denton, 76207 3 Silicon Technology Development, Texas Instruments, Dallas, 75234 ABSTRACT Plasma ash processes that cause surface damage in porous interlayer dielectric materials (ILDs) result in increased water absorption, permittivity, and metal intrusion. In this study, we employ alkoxide silylation agents containing one to three methoxy groups dissolved in supercritical CO2 to repair O2 ash damaged low-k methylsilsesquioxane (MSQ) films. Fourier transform infrared spectroscopy (FTIR) was performed using normal incidence transmission and grazing angle attenuated total reflection (GATR) techniques to highlight differences in silylation efficiency based on agent functionality. Contact angle measurements reveal a significant change in hydrophobicity after functionalization of the O2 ashed samples with multifunctional agents. Atomic force microscopy (AFM) was utilized to determine changes in surface topography after ashing and subsequent repair. These data provide insight into the chemical and topographical changes resulting from ashing and silylation of porous MSQ, and suggest implications for the adhesion, uniformity, and reliability of subsequent metal or barrier layers. INTRODUCTION Continued scaling of critical dimensions in semiconductor devices as outlined in the ITRS roadmap requires maturation of interlayer dielectric (ILD) materials with low (k
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