Toward Understanding the Adsorption And Inhibition Mechanism of Cu-MBTA Passivation Film on Copper Surface: A Combined E
- PDF / 1,792,886 Bytes
- 10 Pages / 595.276 x 790.866 pts Page_size
- 40 Downloads / 158 Views
ORIGINAL ARTICLE - THEORY, CHARACTERIZATION AND MODELING
Toward Understanding the Adsorption And Inhibition Mechanism of Cu‑MBTA Passivation Film on Copper Surface: A Combined Experimental and DFT Investigation Mengrui Liu1,2 · Da Yin1,2 · Baimei Tan1,2 · Fan Yang1,2 · Xiaoqin Sun1,2 · Pengcheng Gao1,2 · Shihao Zhang1,2 · Yazhen Wang1,2 Received: 31 August 2020 / Accepted: 19 October 2020 © The Korean Institute of Metals and Materials 2020
Abstract The adsorption and passivation reactions of 5-methyl benzotriazole (MBTA) with different copper samples (as received, citric acid treated and citric acid and K IO4 treated) were studied. The experiments were characterized by contact angle measurement, potentiodynamic polarization curve, electrochemical impedance spectroscopy and X-ray photoelectron spectroscopy. The results showed that the adsorption behavior of MBTA on different treated surfaces was different and MBTA was preferentially adsorbed on the surface of citric acid treated copper. Based on the density functional theory, quantum chemical descriptors such as the frontier molecular orbital energies EHOMO, ELUMO and the energy gap between them, molecular electrostatic potential, and Fukui function had been calculated and discussed. The adsorption mechanism of MBTA and copper surface was further revealed, which had positive significance for the corrosion inhibition of copper surface in copper interconnection CMP. Graphic Abstract
Keywords Cu-MBTA passivation film · Adsorption mechanism · EIS · XPS · Density functional theory (DFT)
1 Introduction * Baimei Tan [email protected] * Fan Yang [email protected] 1
School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, China
Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130, China
2
Copper (Cu) is widely used as an interconnect material due to its excellent high conductivity, and high resistance to electromigration. Chemical mechanical planarization (CMP) process can achieve a high material removal rate and less defects through the synergistic effect between chemical reaction and mechanical polishing, and realize a high planarization of copper interconnection [1–3]. Ruthenium (Ru) has
13
Vol.:(0123456789)
become one of the most promising barrier materials for the next generation copper interconnection of integrated circuit because of its super properties with scaling down of feature size of chips. Ru has excellent conductivity, thermal stability (melting point 2310 °C), and outstanding adhesion ability with copper [4]. Compared with tantalum (Ta) (14 μΩ∙cm) and tantalum nitride (TaN) (200 μΩ∙cm), Ru has low resistivity (7 μΩ∙cm), which can improve the reliability of interconnection. However, when ruthenium was considered to be used as barrier metal, it was difficult to be removed during CMP process due to the inertness to most chemicals and high hardness (6.5 Mohs). L. Jiang et al. [5] found that the potassium periodate (KIO4)-based slurry could effectively improve the mat
Data Loading...
