Transformation of defect layer and zinc implant profile in silicon during thermal annealing
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EAL STRUCTURE OF CRYSTALS
Transformation of Defect Layer and Zinc Implant Profile in Silicon during Thermal Annealing V. S. Kulikauskasa, V. V. Saraikinb, D. V. Roshchupkinc, and V. V. Privezentsevd a
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow, 119991 Russia b Institute for Physical Problems, Zelenograd, Moscow, 124460 Russia c Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432 Russia d Institute of Physics and Technology, Russian Academy of Sciences, Nakhimovskii pr. 34, Moscow, 117218 Russia email: [email protected] Received January 11, 2011
Abstract—The transformation of the structure of a radiationdamaged silicon layer and profiles of implanted dopant Zn during thermal annealings has been investigated. The analysis was performed by Rutherford back scattering spectroscopy, secondaryion mass spectrometry, and highresolution Xray diffraction. It is estab lished that the surface region of radiationinduced point defects (Frenkel pairs) 78 nm thick is formed in the implanted samples. A heat treatment at 400oC leads to the annealing of interstitial point defects and reduces the damagedlayer thickness to 56 nm. This layer may contain vacancy clusters or clusters of zinc–vacancy complexes. The segregation of implanted dopant Zn is observed near the maximum of its depth distribution. Annealing at 700oC leads to the almost complete recovery of the damaged layer. Two concentration peaks were formed in the sample, i.e., one near the substrate surface and the other near the peak of distribution of radiationinduced point defects. During the ion implantation of zinc and at subsequent stages of thermal annealing, zinc precipitated in the form of zinc silicide (of the ZnSiO3 type). DOI: 10.1134/S1063774512070140
INTRODUCTION
EXPERIMENTAL
Currently, the properties of metal and metal oxide nanoparticles in different matrices are widely investi gated because, due to their unique properties, nano structured materials are promising for modern micro and optoelectronic devices [1, 2]. In particular, these nanoparticles can be obtained by the ion implantation of a metal impurity into a silicon substrate with subse quent thermal annealing in various atmospheres. An important feature of ion implantation, along with its purity, mobility, etc., is that it yields impurity concen trations much higher than the equilibrium solubility limit of impurities in the substrate. Thermal annealing in different modifications is used not only to anneal radiationinduced point defects, but also to induce nucleation and the growth of metal and metal oxide nanoparticles [3]. Therefore, the investigation of sili con implanted with metal impurities is very urgent. In this paper, we report the results of studying the trans formation of the structure of radiationdamaged layer and profiles of the Zn implant during thermal anneal ing. The study was performed using Rutherford back scattering spectroscopy (RBS), secon
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