Upcoming Conferences
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European Workshop on Ref ractory Metals and Silicides Slated for March 1989 A European Workshop on Refractory Metals and Silicides is scheduled for March 20-22, 1989 in Houthalen, Belgium. The Workshop is being organized by the Interuniversity Microelectronics Center (IMEC), Louvain, Belgium, as a residential program at the Hengelhoef Conference complex. It follows a successful 1987 Workshop organized by the Centre National dEtudes des Telecommunications (CNET, Meylan, France) on the same subject. The 1989 Workshop will cover a variety of subjects dealing with refractory metals and silicides, including fundamental studies, deposition and formation techniques, film properties, VLSI processrelated aspects, and novel applications. Papers will also be presented on device aspects dealing with contacts and interconnects for both Silicon and Compound semiconductors. Invited papers will be scheduled as lead-off presentations to the subjects of the regulär sessions. There will be both oral and poster contributions. Members of the scientific committee include: G. Bomchil (CNET, Meylan, France), R. De Keersmaecker (IMEC, Louvain, Belgium), K. Hieber (Siemens, Munich, W. Germany), P. Huggett (Plessey Research, Caswell, U.K.), R. Madar (CNRS), Grenoble, France), G. Ottaviani (University of Modena, Italy). S. Petersson (Royal Institute of Technology, Stockholm, Sweden), I. Suni (Technological Research Center, Espoo, Finland), W. van der Weg (State University, Utrecht, Netherlands), M. van Rossum (IMEC, Louvain, Belgium), and C. Werkhoven (Philips, Eindhoven, Netherlands). For information contact: Dr. R. De Keersmaecker, IMEC, Kapeldreef 75, B3030 Louvain, Belgium; telephone (32) 1628121
Third Session of European School on lll-V Compound Microelectronics Will Be Held in October The third Session of the European School on High Speed Digital and Microwave GaAs Integrated Circuits and Optoelectronic Systems will be held October 10-19, 1988 in Paris, Xl/Orsay and Bordeaux. Topics to be covered in this Session include high speed signal processing GaAs, digital füll USTOM and Standard cells, CAD, fast analog-to-digital Converters, monolithic microwave integrated circuit design and characterization, op44
toelectronic devices and interface Systems and reverse engineering, failure analysis of GaAs, integrated circuits, qualification and testing. This session completes a series of three independent but correlated sessions of theoretical and practical courses and laboratory Visits organized by Euroforum, an Organization of the European Economic Community. The first Session, held May 9-13, 1988 in Madrid, dealt with the electronic and optical properties of III-V materials, characterization techniques, and the basic physics of advanced devices. The second session, held June 20-24 in Aachen, discussed advanced devices and IC technologies, MOVPE and MBE equipment, growth of thin films, dielectric film deposition and characterization, submicron lithography, and dry etching. For further information contact: A.M. Ruiz Jimenez (Spain), telephone
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