Wafer-scale epitaxial single-crystalline Ni(111) films on sapphires for graphene growth
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Wafer-scale epitaxial single-crystalline Ni(111) films on sapphires for graphene growth Yueguo Hu1, Junping Peng1, Mengchun Pan1, Weicheng Qiu1, Ruinan Wu1, Jiafei Hu1, Nan Hu2, Feiyu Cheng2, Rong Huang2, Fangsen Li2,*, Dixiang Chen1, Qi Zhang1, and Peisen Li1,* 1 2
College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, Hunan, China Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China
Received: 9 September 2020
ABSTRACT
Accepted: 13 October 2020
The growth of graphene on Ni magnetic films is of great significance for graphene spintronics, whereas the existence of grain boundaries and twin crystal structures in Ni films is an obstacle for obtaining the large-scale and uniform graphene. In this paper, an epitaxial wafer-scale single-crystalline Ni(111) film with the flat and clean surface was successfully prepared on the commercial aAl2O3(0001) substrate by a two-step method, which was demonstrated with several characterization methods. According to the abnormal grain growth mechanism, the clean and uniform sapphire surface plays a key role for the single crystallization of Ni films as it induces a weak interface energy difference between two atomic stacking structures (ABC and ACB), thus stimulating the evolution of Ni films from (111) out-of-plane textures to single crystals. Furthermore, an ultra-flat and wrinkle-free graphene monolayer was synthesized on the prepared Ni film, which further verified its high quality and effectiveness.
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Springer Science+Business
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Handling Editor: Kevin Jones.
Address correspondence to E-mail: [email protected]; [email protected]
https://doi.org/10.1007/s10853-020-05450-4
J Mater Sci
GRAPHIC ABSTRACT ABC
ACB
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As deposited After annealing
Intensity (a.u.)
[10 0]
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Introduction Graphene has been viewed as a promising candidate material in a wide range of fields due to its superior electronic, photonic and mechanical properties [1–4]. For the electronic device application, large-scale and uniform single-crystalline graphene is highly expected [5]. So far, there have been lots of reports about the advanced performance of devices using highquality graphene. However, most of the graphene is mechanically exfoliated from the graphite flake with the size limited to dozens of microns, which is not scalable for application [1, 5]. In order to provide the wafer-scale graphene film to meet the demand of industrial production, much progress has been made on another growth method called chemical vapor deposition (CVD) [6–9]. Nevertheless, it is proved to be difficult to obtain a uniform large-area singlecrystalline graphene membrane on polycrystalline metal foils (such as Cu foils) as the substrate is usually with a large number of grain boundaries. In this case, the graphene grown on adjacent grains having different in-plane
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