A facile microwave synthesis of Cr-doped CdS QDs and investigation of their physical properties for optoelectronic appli
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ORIGINAL ARTICLE
A facile microwave synthesis of Cr‑doped CdS QDs and investigation of their physical properties for optoelectronic applications Mohd. Shkir1 · Ziaul Raza Khan2 · Kamlesh V. Chandekar3 · T. Alshahrani4 · Ashwani Kumar5 · S. AlFaify1 Received: 10 June 2020 / Accepted: 1 July 2020 © King Abdulaziz City for Science and Technology 2020
Abstract Herein, we present the facile synthesis of different content of chromium (Cr)-doped CdS quantum dots (Cr@CdS QDs) using microwave route within 15 min. The synthesized Cr@CdS QDs were investigated for structural, morphological, optodielectric, and electrical natures. X-ray diffraction confirms the monophasic hexagonal system of Cr@CdS and the sizes of crystallites are calculated to be 8.72, 7.04, 8.84, 6.56, 5.96, 6.52 and 6.99 nm for 0.0, 0.5, 1.0, 5.0, 10.0, 15.0, and 20.0 wt% Cr@CdS samples. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies reveal the quantum dots size spherical shape morphology of synthesized Cr@CdS samples and the size is noted in range of 8.5–8.1 nm. The lattice spacing and orientation of grown QDs was also evaluated by high-resolution TEM and Selected Area Electron Diffraction (SAED) pattern. Diffused reflectance spectra were recorded and Kubelka–Munk theory is employed to estimate the energy gap. The energy gap was estimated between 2.4 and 2.46 eV for Cr@CdS QDs. Photoluminescence (PL) emission spectra own an strong emission peak in both spectra recorded at two different excitation wavelengths and revealed that the PL emission intensity is quenched with Cr doping in CdS. Dielectric and ac electrical studies shows the dependence on frequency and Cr content doping, and constant values are enhanced from 14 to 17 at 4 MHz. The prepared Cr@CdS QDs will be highly useful as sensitizers in solar cell, spintronics, and optoelectronics. Keywords Cr@CdS QDs · Nanosynthesis · X-ray diffraction · SEM/TEM · Optical properties · Dielectric properties
Introduction Quantum confinement phenomena in semiconductor materials giving a new opportunity to develop the semiconductor materials with the desire properties needed for fifth * Mohd. Shkir [email protected] 1
Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, Abha 61413, Saudi Arabia
2
Department of Physics, College of Science, University of Hail, P.O. Box 2440, Hail, Saudi Arabia
3
Department of Physics, Rayat Shikshan Sanstha’s, Karmaveer Bhaurao Patil College, Vashi, Navi Mumbai 400703, MS, India
4
Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, Riyadh 11671, Saudi Arabia
5
Department of Physics, IK Gujral Punjab Technical University, Kapurthala 144603, India
generation optoelectronic devices. Quantum confinement of electron–hole pairs is two types, viz., weak and strong quantum confinement which is directly related to the Bohr exciton radius of semiconductor compound. Therefore, quantum dots synthesis of wid
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