A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an applicatio
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esearch Letter
A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics Santhana Eswara and Alisa Pshenova, Advanced Instrumentation for Nano-Analytics (AINA), Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41, Rue du Brill, L-4422 Belvaux, Luxembourg Esther Lentzen, Advanced Characterization Platform, Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41, Rue du Brill, L-4422 Belvaux, Luxembourg Gizem Nogay, Mario Lehmann, Andrea Ingenito, Quentin Jeangros, and Franz-Josef Haug, Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab), Rue de la Maladière 71b, 2002 Neuchâtel, Switzerland Nathalie Valle, Advanced Characterization Platform, Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41, Rue du Brill, L-4422 Belvaux, Luxembourg Patrick Philipp, Advanced Instrumentation for Nano-Analytics (AINA), Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41, Rue du Brill, L-4422 Belvaux, Luxembourg Aïcha Hessler-Wyser, Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab), Rue de la Maladière 71b, 2002 Neuchâtel, Switzerland Tom Wirtz, Advanced Instrumentation for Nano-Analytics (AINA), Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41, Rue du Brill, L-4422 Belvaux, Luxembourg Address all correspondence to Santhana Eswara at [email protected] (Received 23 January 2019; accepted 14 June 2019)
Abstract A method for rapid quantitative imaging of dopant distribution using secondary ion mass spectrometry (SIMS) is described. The method is based on SIMS imaging of the cross-section of a reference sample with a known concentration profile. It is demonstrated for the case of boron quantification in silicon in a SIMS imaging mode. A nonlinear relationship between the secondary ion intensity and the concentration is observed. A detection limit of 3 (±2) × 1017 at./cm3 (∼6 ppm) is determined with 39 nm pixel-size for the used experimental conditions. As an application example, a boron concentration profile in a passivating contact deposited on a textured Si surface is analyzed.
Introduction Quantitative nanoscale chemical imaging of elements present in low concentrations is required in many areas of scientific research. The chemical, physical, and electronic properties of materials can be dramatically changed by additions of even small concentrations of doping or alloying elements. For example, dopants are used in semiconductor materials to tune their electronic properties.[1] Likewise, small additions of carbon (C) or boron (B) in steel are known to drastically change their mechanical properties.[2] Modern materials are often design
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