Microscopy of Semiconducting Materials 1985
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Microscopy of Semiconducting Materials 1985 Anthony G. Cullis RSRE Corporation
The fourth in a biennial series on Microscopy of Semiconducting Materials was held at St. Catherine's College, Oxford, England, on March 27-29, 1985. The chairmen of the conference were Dr. A. G. Cullis (RSRE, Malvern) and Dr. D. B. Holt (Imperial College, London). The event was organized under the auspices of the Royal Microscopical Society and cosponsored by the Institute of Physics (UK) and the Materials Research Society. More than 200 delegates attended from the UK and 14 other countries. The applications of various types of microscopy and related characterization techniques to semiconducting materials studies spanned a wide range which encompassed both fundamental solid-state research and also advanced electronic device work. While much of the work reported in the 85 conference papers involved the study of elemental silicon, extensive coverage was also given to compound semiconductors. The conference was opened by Prof. Sir Peter Hirsch. The different scientific sessions focused attention on individual topics of particluar current importance and were introduced by invited speakers. A paper by Dr. F. A. Ponce (Xerox Labs) reviewed the application of high resolution transmission electron microscopy to the study of microdefects in silicon, gallium arsenide, and II-VI semiconducting compounds. The use of lattice imaging techniques to identify nanometer-size crystal defects was described. Following papers extended the application of these techniques to problems involving the diffusion and precipitation of impurities in silicon, the structure of grain boundaries in germanium, and the characterization of compound semiconductor epitaxial layers and superlattices. A special session was devoted to dislocation phenomena with an initial presentation by Prof. P. Haasen (Gottingen University) outlining the effects of stage IV compression in elemental semiconductors. Contributed work covered additional experimental and theoretical progress in this area.
G. R. Booker answers questions on developments in TEM studies. An overview of developments in transmission electron microscope studies of compound semiconductors was given by Dr. G. R. Booker (Oxford University). The session following this wide-ranging talk covered important EL2 defect phenomena, grain boundaries, and the effects of heavy ion damage in gallium arsenide. The characterization of defects in indium phosphide and cadmium telluride was also treated. A large amount of work focused on the investigation of epitaxial layer structures. Several papers discussed alloy clustering and spinodal decomposition effects in ternary and quaternary III-V semiconductor layers. The importance of lattice relaxation in thin specimens was emphasized. A number of transmission microscope studies of the structure of superlattices based on gallium arsenide and lead telluride demonstrated the layer growth characteristics found in these systems. The growth of epitaxial silicon was also described with detailed con
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