An Apparatus for Magnetron Sputter Coating and Plasma Immersion Ion Implantation
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W. ENSINGER*, J. HARTMANN*, J. KLEIN**, P. USEDOM**, B. STRITZKER*, B. RAUSCHENBACH* *Universitat Augsburg, Institut fur Physik, Augsburg, Germany **Fraunhofer-Institut fur Lasertechnik, Aachen, Germany ABSTRACT A coating apparatus which combines two material modification techniques, sputter coating and plasma immersion ion implantation, is described. The plasma is generated by an electron cyclotron resonance microwave plasma source. In the upper part of the vacuum chamber, the plasma is confined in a magnetic field by means of a solenoid. In the lower part, a magnetron sputter cathode is mounted which is used for depositing thin films on the sample. The sample is clamped onto a water-cooled sample holder which can be moved in vertical direction. It is connected to a semiconductor-based high voltage pulse generator which provides negative voltage pulses. In this apparatus, a substrate can be pre-implanted by plasma immersion ion implantation, then it can be coated by sputtering. Finally, the sputtered film can be modified by another ion implantation step. INTRODUCTION In recent years, various studies have proven that plasma immersion ion implantation (Pi11), also termed plasma source ion implantation, is an efficient technique for surface treatment of materials [1...8]. The PIll technique is comparable to conventional beam-line ion implantation. The latter has been combined with thin film deposition to the ion beam mixing technique. Energetic ion bombardment modifies the properties of the film and its interface to the substrate [9... 12]. The same concept can be applied to plasma immersion ion implantation. As an example, Conrad et al. reported the formation of a 0.3 pm thick TiN film by a combination of titanium sputter deposition in an argon plasma and subsequent treatment by nitrogen PIII [13]. Another example is a study on the oxidation of evaporated niobium films by oxygen PIII [14]. In the present paper, an apparatus which combines sputter coating and plasma immersion ion implantation is described. THE SETUP OF THE APPARATUS The vacuum chamber Fig. I shows a schematic cross-section of the setup of the combined sputter deposition/ plasma immersion ion implantation apparatus. The vacuum chamber is a cylindrical stainless steel chamber with double wall for intense cooling. The upper part has a diameter of 400 mm and a height of 200 mm, the lower part has a diameter of 600 mm and a height of 600 mm. The chamber is pumped by a 1000 l/s turbomolecular pump combined with a rotary forepump. The pumping system is separated from the vacuum vessel by a gate valve. The
521 Mat. Res. Soc. Symp. Proc. Vol. 396 01996 Materials Research Society
valve can be used as a throttle to control pressure and gas flow through the chamber, in addition to a gas flow control system at the gas inlet of the plasma source. The workpiece holder is a horizontally mounted steelplate with a diameter of 50 mm. It is cooled by deionized water through a pipe system. For electrical insulation, it is mounted on a ceramic tube. The tube is fixed t
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